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Subject: Metals × WGL Institute: IKZ ×

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    Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation
    (Melville, NY : AIP Publ., 2022) Lee, Ming-Hsun; Chou, Ta-Shun; Bin Anooz, Saud; Galazka, Zbigniew; Popp, Andreas; Peterson, Rebecca L.
    Here, we investigate the effect of post-metallization anneal temperature on Ti/Au ohmic contact performance for (100)-oriented Ga2O3. A low contact resistance of ∼2.49 × 10−5 Ω·cm2 is achieved at an optimal anneal temperature of ∼420 °C for (100) Ga2O3. This is lower than the widely-used temperature of 470 °C for (010)-oriented Ga2O3. However, drastic degradation of the (100)-oriented contact resistance to ∼1.36 × 10−3 Ω·cm2 is observed when the anneal temperature was increased to 520 °C. Microscopy at the degraded ohmic contact revealed that the reacted Ti–TiOx interfacial layer has greatly expanded to 25–30 nm thickness and GaAu2 inclusions have formed between (310)-Ga2O3 planes and the Ti–TiOx layer. This degraded interface, which corresponds to the deterioration of ohmic contact properties, likely results from excess in-diffusion of Au and out-diffusion of Ga, concurrent with the expansion of the Ti–TiOx layer. These results demonstrate the critical influence of Ga2O3 anisotropy on the optimal post-metallization anneal temperature. Moreover, the observed Ti/Au contact degradation occurs for relatively moderate anneal conditions (520 °C for 1 min in N2), pointing to the urgent necessity of developing alternative metallization schemes for gallium oxide, including the use of Au-free electrodes
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    A photonic platform for donor spin qubits in silicon
    (Washington, DC [u.a.] : Assoc., 2017) Morse, Kevin J.; Abraham, Rohan J. S.; DeAbreu, Adam; Bowness, Camille; Richards, Timothy S.; Riemann, Helge; Abrosimov, Nikolay V.; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Michael L. W.; Simmons, Stephanie
    Donor spins in silicon are highly competitive qubits for upcoming quantum technologies, offering complementary metal-oxide semiconductor compatibility, coherence (T2) times of minutes to hours, and simultaneous initialization, manipulation, and readout fidelities near ~99.9%. This allows for many quantum error correction protocols, which will be essential for scale-up. However, a proven method of reliably coupling spatially separated donor qubits has yet to be identified. We present a scalable silicon-based platform using the unique optical properties of “deep” chalcogen donors. For the prototypical 77Se+ donor, we measure lower bounds on the transition dipole moment and excited-state lifetime, enabling access to the strong coupling limit of cavity quantum electrodynamics using known silicon photonic resonator technology and integrated silicon photonics. We also report relatively strong photon emission from this same transition. These results unlock clear pathways for silicon-based quantum computing, spin-to-photon conversion, photonic memories, integrated single-photon sources, and all-optical switches.