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- ItemSite-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing(Frankfurt am Main : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2018) Xu, X.; Prüfer, T.; Wolf, D.; Engelmann, H.-J.; Bischoff, L.; Hübner, R.; Heinig, K.-H.; Möller, W.; Facsko, S.; von Borany, J.; Hlawacek, G.For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne+ beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO2 layers and perpendicular to the incident Ne+ beam.
- ItemSpin pumping at interfaces with ferro- and paramagnetic Fe60Al40films acting as spin source and spin sink(Melville, NY : American Inst. of Physics, 2022) Strusch, T.; Lenz, K.; Meckenstock, R.; Bali, R.; Ehrler, J.; Lindner, J.; Fassbender, J.; Farle, M.; Potzger, K.; Semisalova, A.We present a study of spin pumping efficiency and determine the spin mixing conductance and spin diffusion length in thin bilayer films based on 3d transition metal alloy Fe60Al40. Due to its magnetostructural phase transition, Fe60Al40 can be utilized as a ferromagnetic (FM) or paramagnetic (PM) material at the same temperature depending on its structural order; thus a thin Fe60Al40 film can act as a spin source or a spin sink when interfaced with a paramagnet or a ferromagnet, respectively. Ferromagnetic resonance measurements were performed in a frequency range of 5-35 GHz on bilayer films composed of FM-Fe60Al40/Pd and PM-Fe60Al40/Ni80Fe20 (permalloy). The increase in damping with the thickness of the paramagnetic layer was interpreted as a result of spin pumping into the paramagnet. We determine the spin mixing conductance g P d ↑↓ = (3.8 ± 0.5) × 10 18 m - 2 at the FM-Fe60Al40/Pd interface and the spin diffusion length λ P d = 9.1 ± 2.0 nm in Pd. For the PM-Fe60Al40/permalloy interface, we find a spin mixing conductance g F e A l ↑↓ = (2.1 ± 0.2) × 10 18 m - 2 and a spin diffusion length λ F e A l = 11.9 ± 0.2 nm for PM-Fe60Al40. The demonstrated bi-functionality of the Fe60Al40 alloy in spin pumping structures may be promising for spintronic applications.
- ItemComputer modeling of single-layer nanocluster formation in a thin SiO2 layer buried in Si by ion mixing and thermal phase decomposition(College Park, MD : American Institute of Physics, 2019) Prüfer, T.; Möller, W.; Heinig, K.-H.; Wolf, D.; Engelmann, H.-J.; Xu, X.; Von Borany, J.A single sheet of Si nanoclusters with an average diameter of about 2 nm has been formed in a 30 nm Si/7 nm SiO2/Si layer stack by 50 and 60 keV Si+ ion-beam mixing at room temperature and fluences between 8.5 ⋯ 1015 and 2.6 ⋯ 1016 ions/cm2 and by subsequent thermal annealing at a temperature above 1000 °C. Computer modeling of the process is accomplished by TRIDYN dynamic ballistic simulation of ion mixing and subsequent lattice kinetic Monte Carlo simulation of the phase decomposition of substoichiometric silicon oxide into Si nanoclusters in a SiO2 matrix. The simulation algorithms are briefly described with special emphasis on the choice of governing parameters for the present system. In comparison to the experimental results, it is concluded that the predicted ion mixing profiles overestimate the interface broadening. This discrepancy is attributed to the neglect of chemical driving forces in connection with thermal-spike induced diffusion, which tends to reconstitute the Si/SiO2 interfaces. With a corresponding correction and a suitable number of Monte Carlo steps, the experimentally obtained areal densities and average diameters of the nanoclusters are successfully reproduced.