2019, Menzel, S.B., Seifert, M., Priyadarshi, A., Rane, G.K., Park, E., Oswald, S., Gemming, T.

Developing advanced thin film materials is the key challenge in high-temperature applications of surface acoustic wave sensor devices. One hundred nanometer thick (Mo-La2O3) multilayer systems were fabricated at room temperature on thermally oxidized (100) Si substrates (SiO2/Si) to study the effect of lanthanum oxide on the electrical resistivity of molybdenum thin films and their high-temperature stability. The multilayer systems were deposited by the magnetron sputter deposition of extremely thin (≤1 nm) La interlayers in between adjacent Mo layers. After deposition of each La layer the process was interrupted for 25 to 60 min to oxidize the La using the residual oxygen in the high vacuum of the deposition chamber. The samples were annealed at 800 °C in high vacuum for up to 120 h. In case of a 1 nm thick La interlayer in-between the Mo a continuous layer of La2O3 is formed. For thinner La layers an interlayer between adjacent Mo layers is observed consisting of a (La2O3-Mo) mixed structure of molybdenum and nm-sized lanthanum oxide particles. Measurements show that the (Mo-La2O3) multilayer systems on SiO2/Si substrates are stable at least up to 800 °C for 120 h in high vacuum conditions.

2013, Legall, H., Stiel, H., Blobel, G., Seim, C., Baumann, J., Yulin, S., Esser, D., Hoefer, M., Wiesemann, U., Wirtz, M., Schneider, G., Rehbein, S., Hertz, H.M.

In the water window (2.2-4.4 nm) the attenuation of radiation in water is significantly smaller than in organic material. Therefore, intact biological specimen (e.g. cells) can be investigated in their natural environment. In order to make this technique accessible to users in a laboratory environment a Full-Field Laboratory Transmission X-ray Microscope (L-TXM) has been developed. The L-TXM is operated with a nitrogen laser plasma source employing an InnoSlab high power laser system for plasma generation. For microscopy the Ly α emission of highly ionized nitrogen at 2.48 nm is used. A laser plasma brightness of 5 × 1011 photons/(s × sr × μm2 in line at 2.48 nm) at a laser power of 70 W is demonstrated. In combination with a state-of-the-art Cr/V multilayer condenser mirror the sample is illuminated with 106 photons/(μm2 × s). Using objective zone plates 35-40 nm lines can be resolved with exposure times < 60 s. The exposure time can be further reduced to 20 s by the use of new multilayer condenser optics and operating the laser at its full power of 130 W. These exposure times enable cryo tomography in a laboratory environment.

2019, Kamashev, A.A., Garif'yanov, N.N., Validov, A.A., Schumann, J., Kataev, V., Büchner, B., Fominov, Y.V., Garifullin, I.A.

We report the superconducting properties of the Co2Cr1-xFexAly/Cu/Ni/Cu/Pb spin-valve structure the magnetic part of which comprises the Heusler alloy layer HA = Co2Cr1-xFexAly with a high degree of spin polarization (DSP) of the conduction band and a Ni layer of variable thickness. The separation between the superconducting transition curves measured for the parallel (α = 0°) and perpendicular (α = 90°) orientation of the magnetization of the HA and the Ni layers reaches up to 0.5 K (α is the angle between the magnetization of two ferromagnetic layers). For all studied samples the dependence of the superconducting transition temperature Tc on α demonstrates a deep minimum in the vicinity of the perpendicular configuration of the magnetizations. This suggests that the observed minimum and the corresponding full switching effect of the spin valve is caused by the long-range triplet component of the superconducting condensate in the multilayer. Such a large effect can be attributed to a half-metallic nature of the HA layer, which in the orthogonal configuration efficiently draws off the spin-polarized Cooper pairs from the space between the HA and Ni layers. Our results indicate a significant potential of the concept of a superconducting spin-valve multilayer comprising a half-metallic ferromagnet, recently proposed by A. Singh et al., Phys. Rev. X 2015, 5, 021019, in achieving large values of the switching effect.

2017-3-1, Hengst, Claudia, Menzel, Siegfried B., Rane, Gayatri K., Smirnov, Vladimir, Wilken, Karen, Leszczynska, Barbara, Fischer, Dustin, Prager, Nicole

The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young’s modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain–subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service.

2023, Lou, Rui, Suvorov, Oleksandr, Grafe, Hans-Joachim, Kuibarov, Andrii, Krivenkov, Maxim, Rader, Oliver, Büchner, Bernd, Borisenko, Sergey, Fedorov, Alexander

The nematicity in multilayer FeSe/SrTiO3 films has been previously suggested to be enhanced with decreasing film thickness. Motivated by this, there have been many discussions about the competing relation between nematicity and superconductivity. However, the criterion for determining the nematicity strength in FeSe remains highly debated. The understanding of nematicity as well as its relation to superconductivity in FeSe films is therefore still controversial. Here, we fabricate multilayer FeSe/SrTiO3 films using molecular beam epitaxy and study the nematic properties by combining angle-resolved photoemission spectroscopy, Se77 nuclear magnetic resonance, and scanning tunneling microscopy experiments. We unambiguously demonstrate that, near the interface, the nematic order is suppressed by the SrTiO3-induced tensile strain; in the bulk region further away from the interface, the strength of nematicity recovers to the bulk value. Our results not only solve the recent controversy about the nematicity in multilayer FeSe films, but also offer valuable insights into the relationship between nematicity and superconductivity.

2014, Bowlan, P., Martinez-Moreno, E., Reimann, K., Woerner, M., Elsaesser, T.

The nonlinear interaction between intense terahertz (THz) pulses and epitaxial multilayer graphene is studied by field-resolved THz pump-probe spectroscopy. THz excitation results in a transient induced absorption with decay times of a few picoseconds, much faster than carrier recombination in single graphene layers. The decay times increase with decreasing temperature and increasing amplitude of the excitation. This behaviour originates from the predominant coupling of electrons to the electromagnetic field via the very strong interband dipole moment while scattering processes with phonons and impurities play a minor role. The nonlinear response at field amplitudes above 1 kV cm-1 is in the carrier-wave Rabi flopping regime with a pronounced coupling of the graphene layers via the radiation field. Theoretical calculations account for the experimental results.

2020, Seifert, M., Lattner, E., Menzel, S.B., Oswald, S., Gemming, T.

Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO2 layer, which was used as an oxidation protection against the ambient atmosphere. The films were annealed at up to 800 °C in high vacuum for 10 h, and the phase formation as well as the film architecture was analyzed by X-ray diffraction, cross section, and transmission electron microscopy, as well as Auger electron and X-ray photoelectron spectroscopy. The results reveal that the co-sputtered films remained amorphous after annealing at 600 °C independent on the presence of the SiO2 cover layer. In contrast to this, the γ-TiAl phase was formed in the multilayer films at this temperature. After annealing at 800 °C, all films were degraded completely despite the presence of the cover layer. In addition, a strong chemical reaction between the Ti and SiO2 of the cover layer and the substrate took place, resulting in the formation of Ti silicide. In the multilayer samples, this reaction already started at 600 °C.

2018, Kamashev, A.A., Validov, A.A., Schumann, J., Kataev, V., Büchner, B., Fominov, Y.V., Garifullin, I.A.

We have studied superconducting properties of spin-valve thin-layer heterostructures CoOx/F1/Cu/F2/Cu/Pb in which the ferromagnetic F1 layer was made of Permalloy while for the F2 layer we have taken a specially prepared film of the Heusler alloy Co2Cr1-xFexAl with a small degree of spin polarization of the conduction band. The heterostructures demonstrate a significant superconducting spin-valve effect, i.e., a complete switching on and offof the superconducting current flowing through the system by manipulating the mutual orientations of the magnetization of the F1 and F2 layers. The magnitude of the effect is doubled in comparison with the previously studied analogous multilayers with the F2 layer made of the strong ferromagnet Fe. Theoretical analysis shows that a drastic enhancement of the switching effect is due to a smaller exchange field in the heterostructure coming from the Heusler film as compared to Fe. This enables to approach an almost ideal theoretical magnitude of the switching in the Heusler-based multilayer with a F2 layer thickness of ca. 1 nm. © 2018 Kamashev et al.