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- ItemIn situ Raman spectroscopy on silicon nanowire anodes integrated in lithium ion batteries(Pennington, NJ : Electrochemical Society Inc., 2019) Krause, A.; Tkacheva, O.; Omar, A.; Langklotz, U.; Giebeler, L.; Dörfler, S.; Fauth, F.; Mikolajick, T.; Weber, W.M.Rapid decay of silicon anodes during lithiation poses a significant challenge in application of silicon as an anode material in lithium ion batteries. In situ Raman spectroscopy is a powerful method to study the relationship between structural and electrochemical data during electrode cycling and to allow the observation of amorphous as well as liquid and transient species in a battery cell. Herein, we present in situ Raman spectroscopy on high capacity electrode using uncoated and carbon-coated silicon nanowires during first lithiation and delithiation cycle in an optimized lithium ion battery setup and complement the results with operando X-ray reflection diffraction measurements. During lithiation, we were able to detect a new Raman signal at 1859 cm−1 especially on uncoated silicon nanowires. The detailed in situ Raman measurement of the first lithiation/delithiation cycle allowed to differentiate between morphology changes of the electrode as well as interphase formation from electrolyte components.
- ItemOptically transparent vertical silicon nanowire arrays for live-cell imaging(London : Biomed Central, 2021) Elnathan, Roey; Holle, Andrew W.; Young, Jennifer; George, Marina; Heifler, Omri; Goychuk, Andriy; Frey, Erwin; Kemkemer, Ralf; Spatz, Joachim P.; Kosloff, Alon; Patolsky, Fernando; Voelcker, Nicolas H.Programmable nano-bio interfaces driven by tuneable vertically configured nanostructures have recently emerged as a powerful tool for cellular manipulations and interrogations. Such interfaces have strong potential for ground-break-ing advances, particularly in cellular nanobiotechnology and mechanobiology. However, the opaque nature of many nanostructured surfaces makes non-destructive, live-cell characterization of cellular behavior on vertically aligned nanostructures challenging to observe. Here, a new nanofabrication route is proposed that enables harvesting of vertically aligned silicon (Si) nanowires and their subsequent transfer onto an optically transparent substrate, with high efficiency and without artefacts. We demonstrate the potential of this route for efficient live-cell phase contrast imaging and subsequent characterization of cells growing on vertically aligned Si nanowires. This approach provides the first opportunity to understand dynamic cellular responses to a cell-nanowire interface, and thus has the potential to inform the design of future nanoscale cellular manipulation technologies.
- ItemOn the electronic properties of a single dislocation(College Park : American Institute of Physics Inc., 2014) Reiche, M.; Kittler, M.; Erfurth, W.; Pippel, E.; Sklarek, K.; Blumtritt, H.; Haehnel, A.; Uebensee, H.A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm2, the current density through a single dislocation is J = 3.8 × 1012 A/cm2 corresponding to a resistivity of ρ ≅ 1 × 10-8 Ω cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.
- ItemOptical properties of silicon nanowire arrays formed by metal-assisted chemical etching: Evidences for light localization effect(New York, NY [u.a.] : Springer, 2012) Osminkina, L.A.; Gonchar, K.A.; Marshov, V.S.; Bunkov, K.V.; Petrov, D.V.; Golovan, L.A.; Talkenberg, F.; Sivakov, V.A.; Timoshenko, V.Y.We study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100 nm and length of about 1-25 μm formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 ÷ 1 μm results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1 μm increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of 'black silicon', which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing.
- ItemThermally induced evolution of the structure and optical properties of silicon nanowires(Amsterdam [u.a.] : Elsevier, 2020) Mussabek, Gauhar; Lysenko, Vladimir; Yermukhamed, Dana; Sivakov, Vladimir; Yu. Timoshenko, VictorIn the present paper, we report on the investigation of thermal annealing (TA) effect on structural and optical properties of crystalline silicon nanowires produced by metal-assisted chemical etching approach. In particular, the impact of TA on nanowire length, relative volume and size distribution of voids is described in terms of Lifshitz-Slyozov-Wagner theory considering the TA induced Oswald ripening in the SiNW arrays. It was also found that TA leads to a decrease of the SiNWs total reflection in the wide UV–VIS-IR spectral range. The reported effects can be used for tuning of crystalline SiNWs arrays in view of their further applications in photonics related fields. © 2020 The Authors