Filters

2012 - 20192

More filters

20202
Reset filters

Settings

Subject: Nanowires × Subject: Silicon nanowires × Subject: Silicon ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    In situ Raman spectroscopy on silicon nanowire anodes integrated in lithium ion batteries
    (Pennington, NJ : Electrochemical Society Inc., 2019) Krause, A.; Tkacheva, O.; Omar, A.; Langklotz, U.; Giebeler, L.; Dörfler, S.; Fauth, F.; Mikolajick, T.; Weber, W.M.
    Rapid decay of silicon anodes during lithiation poses a significant challenge in application of silicon as an anode material in lithium ion batteries. In situ Raman spectroscopy is a powerful method to study the relationship between structural and electrochemical data during electrode cycling and to allow the observation of amorphous as well as liquid and transient species in a battery cell. Herein, we present in situ Raman spectroscopy on high capacity electrode using uncoated and carbon-coated silicon nanowires during first lithiation and delithiation cycle in an optimized lithium ion battery setup and complement the results with operando X-ray reflection diffraction measurements. During lithiation, we were able to detect a new Raman signal at 1859 cm−1 especially on uncoated silicon nanowires. The detailed in situ Raman measurement of the first lithiation/delithiation cycle allowed to differentiate between morphology changes of the electrode as well as interphase formation from electrolyte components.
  • Thumbnail Image
    Item
    Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: Evidences for light localization effect
    (New York, NY [u.a.] : Springer, 2012) Osminkina, L.A.; Gonchar, K.A.; Marshov, V.S.; Bunkov, K.V.; Petrov, D.V.; Golovan, L.A.; Talkenberg, F.; Sivakov, V.A.; Timoshenko, V.Y.
    We study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100 nm and length of about 1-25 μm formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 ÷ 1 μm results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1 μm increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of 'black silicon', which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing.