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Subject: Near-field ×

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Now showing 1 - 3 of 3
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    Near-field dynamics of broad area diode laser at very high pump levels
    (New York, NY : American Inst. of Physics, 2011) Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsaesser, T.
    Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale.
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    A gold-nanotip optical fiber for plasmon-enhanced near-field detection
    (New York, NY : American Inst. of Physics, 2013) Uebel, P.; Bauerschmidt, S.T.; Schmidt, M.A.; Russell, P.St.J.
    A wet-chemical etching and mechanical cleaving technique is used to fabricate gold nanotips attached to tapered optical fibers. Localized surface plasmon resonances (tunable from 500 to 850 nm by varying the tip dimensions) are excited at the tip, and the signal is transmitted via the fiber to an optical analyzer, making the device a plasmon-enhanced near-field probe. A simple cavity model is used to explain the resonances observed in numerical simulations.
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    60% Efficient Monolithically Wavelength-Stabilized 970-nm DBR Broad-Area Lasers
    (New York, NY : IEEE, 2022) Crump, Paul; Miah, M. Jarez; Wilkens, Martin; Fricke, Jorg; Wenzel, Hans; Knigge, Andrea
    Progress in epitaxial design is shown to enable increased optical output power P opt and power conversion efficiency η E and decreased lateral far-field divergence angle in GaAs-based distributed Bragg reflector (DBR) broad-area (BA) diode lasers. We show that the wavelength-locked power can be significantly increased (saturation at high bias current is mitigated) by migrating from an asymmetric large optical cavity (ASLOC) based laser structure to a highly asymmetric (extreme-triple-asymmetric (ETAS)) layer design. For wavelength-stabilization, 7 th order, monolithic DBRs are etched on the surface of fully grown epitaxial layer structures. The investigated ETAS reference Fabry-Pérot (FP) BA lasers without DBRs and with 200 µm stripe width and 4 mm cavity length provide P opt = 29 W (still increasing) at 30 A in continuous-wave mode at room temperature, in contrast to the maximum P opt = 24 W (limited by strong power saturation) of baseline ASLOC lasers. The reference ETAS FP lasers also deliver over 10% higher η E at P opt = 24 W. On the other hand, in comparison to the wavelength-stabilized ASLOC DBR lasers, ETAS DBR lasers show a peak power increment from 14 W to 22 W, and an efficiency increment from 46% to 60% at P opt = 14 W. A narrow spectral width (< 1 nm at 95% power content) is maintained across a very wide operating range. Consistent with earlier studies, a narrower far-field divergence angle and consequently an improved beam-parameter product is also observed, compared to the ASLOC-based lasers.