Search Results
Terahertz stimulated emission from silicon doped by hydrogenlike acceptors
Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Λ8+ → 1Λ7- , 1Λ6-, 1Λ8- intracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Λ7- , 1Λ6- , and 1Λ8- states, and the lower laser level for both emission lines is the 2Λ8+ state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Λ8+ state and not the 1Λ7+ split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.
Propagator operator for pulse propagation in resonant media
We show that, for the case of resonant media, the available models for unidirectional propagation of short pulses can face serious challenges with respect to numerical efficiency, accuracy, or numerical artifacts. We propose an alternative approach based on a propagator operator defined in the time domain. This approach enables precise simulations using short time windows even for resonant media and facilitates coupling of the propagation equation with first-principle methods such as the time-dependent Schödinger equation. Additionally, we develop a numerically efficient recipe to construct and apply such a propagator operator.
Optimization of quantum trajectories driven by strong-field waveforms
Quasifree field-driven electron trajectories are a key element of strong-field dynamics. Upon recollision with the parent ion, the energy transferred from the field to the electron may be released as attosecondduration extreme ultaviolet emission in the process of high-harmonic generation. The conventional sinusoidal driver fields set limitations on the maximum value of this energy transfer and the efficient return of the launched electron trajectories. It has been predicted that these limits can be significantly exceeded by an appropriately ramped-up cycle shape [L. E. Chipperfield et al., Phys. Rev. Lett. 102, 063003 (2009)]. Here, we present an experimental realization of similar cycle-shaped waveforms and demonstrate control of the high-harmonic generation process on the single-atom quantum level via attosecond steering of the electron trajectories.With our improved optical cycles, we boost the field ionization launching the electron trajectories, increase the subsequent field-to-electron energy transfer, and reduce the trajectory duration. We demonstrate, in realistic experimental conditions, 2 orders of magnitude enhancement of the generated extreme ultraviolet flux together with an increased spectral extension. This application, which is only one example of what can be achieved with cycle-shaped high-field light waves, has significant implications for attosecond spectroscopy and molecular self-probing.
Spatially modulated broad-area lasers for narrow lateral far-field divergence
A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed operation, simulations predict a far-field profile with 0.3° full width at half maximum (ΘFWHM=0.3∘) where a 0.4°-wide main lobe contains 40% of the emitted optical output power (Θ40%=0.4∘). While far-field measurements of these structured lasers emitting 10 ns long pulses with 35 W peak power confirm a substantial enhancement of radiation within the central 1∘ angular range, the measured far-field intensity outside of the obtained central peak remains high.
Scalable, high power line focus diode laser for crystallizing of silicon thin films
We present the design and performance of a diode laser module producing a high intensity line focus at 808 nm for material processing. The design is based on a linear array of 7 laser bars and beam forming optics featuring a micro-optic homogenizer. The module delivers a total output power of 900 W at 140 A and peak intensity created in the focus area of 10.3 kW/cm2. Two systems with line length of 5 cm and 10 cm at a large working distance of 110 mm have been realized. The chosen concept allows scaling in length by joining multiple modules which is of interest for material processing in industrial applications. Application results from laser crystallization of amorphous silicon seed layers used in the fabrication of photovoltaic cells for solar panels are given.
Sub-7 fs radially-polarized pulses by post-compression in thin fused silica plates
We experimentally demonstrate the post-compression of radially polarized 25 fs pulses at 800 nm central wavelength in a multiple thin plate arrangement for the first time, to the best of our knowledge. Sub-7 fs pulses with 90 µJ energy were obtained after dispersion compensation, corresponding to a compression factor of more than 3.5. Preservation of radial polarization state was confirmed by polarized intensity distribution measurements. Linear projections of the radially polarized pulses were also fully characterized in the temporal domain.