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Subject: Pixels × WGL Institute: INM ×

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Now showing 1 - 2 of 2
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    High-Resolution Inkjet Printing of Quantum Dot Light-Emitting Microdiode Arrays
    (Weinheim : Wiley-VCH Verlag, 2020) Yang, P.; Zhang, L.; Kang, D.J.; Strahl, R.; Kraus, T.
    The direct printing of microscale quantum dot light-emitting diodes (QLEDs) is a cost-effective alternative to the placement of pre-formed LEDs. The quality of printed QLEDs currently is limited by nonuniformities in droplet formation, wetting, and drying during inkjet printing. Here, optimal ink formulation which can suppress nonuniformities at the pixel and array levels is demonstrated. A solvent mixture is used to tune the ejected droplet size, ensure wetting, and provoke Marangoni flows that prevent coffee stain rings. Arrays of green QLED devices are printed at a resolution of 500 pixels in.−1 with a maximum luminance of ≈3000 cd m−2 and a peak current efficiency of 2.8 cd A−1. The resulting array quality is sufficient to print displays at state-of-the-art resolutions.
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    Spot profile analysis and lifetime mapping in ultrafast electron diffraction: Lattice excitation of self-organized Ge nanostructures on Si(001)
    (Melville, NY : AIP Publishing LLC, 2015) Frigge, T.; Hafke, B.; Tinnemann, V.; Witte, T.; Horn-von Hoegen, M.
    Ultrafast high energy electron diffraction in reflection geometry is employed to study the structural dynamics of self-organized Germanium hut-, dome-, and relaxed clusters on Si(001) upon femtosecond laser excitation. Utilizing the difference in size and strain state the response of hut- and dome clusters can be distinguished by a transient spot profile analysis. Surface diffraction from {105}-type facets provide exclusive information on hut clusters. A pixel-by-pixel analysis of the dynamics of the entire diffraction pattern gives time constants of 40, 160, and 390 ps, which are assigned to the cooling time constants for hut-, dome-, and relaxed clusters.