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Subject: Point defects ×

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Now showing 1 - 4 of 4
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    Visualization of localized perturbations on a (001) surface of the ferromagnetic semimetal EuB6
    (College Park, MD : American Physical Society, 2020) Rößler, S.; Jiao, L.; Seiro, S.; Rosa, P.F.S.; Fisk, Z.; Rößler, U.K.; Wirth, S.
    We performed scanning tunneling microscopy (STM) and spectroscopy on a (001) surface of the ferromagnetic semimetal EuB6. Large-amplitude oscillations emanating from the elastic scattering of electrons by the surface impurities are observed in topography and in differential conductance maps. Fourier transform of the conductance maps embracing these regions indicate a holelike dispersion centered around the Γ point of the two-dimensional Brillouin zone. Using density functional theory slab calculations, we identify a spin-split surface state, which stems from the dangling pz orbitals of the apical boron atom. Hybridization with bulk electronic states leads to a resonance enhancement in certain regions around the Γ point, contributing to the remarkably strong real-space response around static point defects, which are observed in STM measurements.
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    Structural defects in Fe-Pd-based ferromagnetic shape memory alloys: Tuning transformation properties by ion irradiation and severe plastic deformation
    (Bristol : IOP, 2012) Mayr, S.G.; Arabi-Hashemi, A.
    Fe-Pd-based ferromagnetic shape memory alloys constitute an exciting class of magnetically switchable smart materials that reveal excellent mechanical properties and biocompatibility. However, their application is severely hampered by a lack of understanding of the physics at the atomic scale. A many-body potential is presented that matched ab inito calculations and can account for the energetics of martensite ↔ austenite transition along the Bain path and relative phase stabilities in the ordered and disordered phases of Fe-Pd. Employed in massively parallel classical molecular dynamics simulations, the impact of order/disorder, point defects and severe plastic deformation in the presence of single- and polycrystalline microstructures are explored as a function of temperature. The model predictions are in agreement with experiments on phase changes induced by ion irradiation, cold rolling and hammering, which are also presented.
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    Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
    (Melville, NY : AIP Publ., 2017) Paik, Hanjong; Chen, Zhen; Lochocki, Edward; Seidner H., Ariel; Verma, Amit; Tanen, Nicholas; Park, Jisung; Uchida, Masaki; Shang, ShunLi; Zhou, Bi-Cheng; Brützam, Mario; Uecker, Reinhard; Liu, Zi-Kui; Jena, Debdeep; Shen, Kyle M.; Muller, David A.; Schlom, Darrell G.
    Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.
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    Unravelling the ion-energy-dependent structure evolution and its implications for the elastic properties of (V,Al)N thin films
    (Kidlington : Elsevier Science, 2021) Karimi Aghda, Soheil; Music, Denis; Unutulmazsoy, Yeliz; Sua, Heng Han; Mráz, Stanislav; Hans, Marcus; Primetzhofer, Daniel; Anders, André; Schneider, Jochen M.
    Ion irradiation-induced changes in the structure and mechanical properties of metastable cubic (V,Al)N deposited by reactive high power pulsed magnetron sputtering are systematically investigated by correlating experiments and theory in the ion kinetic energy (Ek) range from 4 to 154 eV. Increasing Ek results in film densification and the evolution from a columnar (111) oriented structure at Ek ≤ 24 eV to a fine-grained structure with (100) preferred orientation for Ek ≥ 104 eV. Furthermore, the compressive intrinsic stress increases by 336 % to -4.8 GPa as Ek is increased from 4 to 104 eV. Higher ion kinetic energy causes stress relaxation to -2.7 GPa at 154 eV. These ion irradiation-induced changes in the thin film stress state are in good agreement with density functional theory simulations. Furthermore, the measured elastic moduli of (V,Al)N thin films exhibit no significant dependence on Ek. The apparent independence of the elastic modulus on Ek can be rationalized by considering the concurrent and balancing effects of bombardment-induced formation of Frenkel pairs (causing a decrease in elastic modulus) and evolution of compressive intrinsic stress (causing an increase in elastic modulus). Hence, the evolution of the film stresses and mechanical properties can be understood based on the complex interplay of ion irradiation-induced defect generation and annihilation.