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Subject: Scanning electron microscopy × WGL Institute: IPHT ×

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Now showing 1 - 3 of 3
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    Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
    (London : Nature Publishing Group, 2021) George, A.; Fistul, M.V.; Gruenewald, M.; Kaiser, D.; Lehnert, T.; Mupparapu, R.; Neumann, C.; Hübner, U.; Schaal, M.; Masurkar, N.; Arava, L.M.R.; Staude, I.; Kaiser, U.; Fritz, T.; Turchanin, A.
    Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD-based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent photoconductivity (PPC). Here we show that ultraviolet light (λ = 365 nm) exposure induces an extremely long-living giant PPC (GPPC) in monolayer MoS2 (ML-MoS2) field-effect transistors (FET) with a time constant of ~30 days. Furthermore, this effect leads to a large enhancement of the conductivity up to a factor of 107. In contrast to previous studies in which the origin of the PPC was attributed to extrinsic reasons such as trapped charges in the substrate or adsorbates, we show that the GPPC arises mainly from the intrinsic properties of ML-MoS2 such as lattice defects that induce a large number of localized states in the forbidden gap. This finding is supported by a detailed experimental and theoretical study of the electric transport in TMD based FETs as well as by characterization of ML-MoS2 with scanning tunneling spectroscopy, high-resolution transmission electron microscopy, and photoluminescence measurements. The obtained results provide a basis for the defect-based engineering of the electronic and optical properties of TMDs for device applications.
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    On the possibility of PhotoEmission Electron Microscopy for E. coli advanced studies
    (Amsterdam [u.a.] : Elsevier, 2020) Turishchev, S.Yu.; Marchenko, D.; Sivakov, V.; Belikov, E.A.; Chuvenkova, O.A.; Parinova, E.V.; Koyuda, D.A.; Chumakov, R.G.; Lebedev, A.M.; Kulikova, T.V.; Berezhnoy, A.A.; Valiakhmedova, I.V.; Praslova, N.V.; Preobrazhenskaya, E.V.; Antipov, S.S.
    The novel approach was proposed for detailed high-resolution studies of morphology and physico-chemical properties concomitantly at one measurement spot of E. coli bacterial cells culture immobilized onto silicon wafer surface in UHV conditions applying PhotoEmission Electron Microscopy under Hg lamp irradiation. For the E. coli characterization scanning electron microscopy (electron beam) and X-ray photoelectron spectroscopy (X-ray tube radiation) were applied prior to PhotoEmission Electron Microscopy measurements. In spite of irradiation doses collected for the cell arrays we were successful in detection of high-resolution images even of single E. coli bacterium by PhotoEmission Electron Microscopy technique followed by detailed high-resolution morphology studies by scanning electron microscopy. These results revealed widespread stability of the E. coli membranes shape after the significant number of applied characterization techniques. © 2019 The Authors
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    Synchrotron studies of top-down grown silicon nanowires
    (Amsterdam : Elsevier, 2018) Turishchev, S.Yu.; Parinova, V.E.; Nesterov, D.N.; Koyuda, D.A.; Sivakov, Vladimir; Schleusener, Alexander; Terekhov, V.A.
    Morphology of the top-down grown silicon nanowires obtained by metal-assisted wet-chemical approach on silicon substrates with different resistance were studied by scanning electron microscopy. Obtained arrays of compact grown Si nanowires were a subject for the high resolution electronic structures studies by X-ray absorption near edge structure technique performed with the usage of high intensity synchrotron radiation of the SRC storage ring of the University of Wisconsin-Madison. The different oxidation rates were found by investigation of silicon atoms local surrounding specificity of the highly developed surface and near surface layer that is not exceeded 70 nm. Flexibility of the wires arrays surface morphology and its composition is demonstrated allowing smoothly form necessary surface oxidation rate and using Si nanowires as a useful matrixes for a wide range of further functionalization.