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Subject: Semiconductor lasers × WGL Institute: MBI ×

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Now showing 1 - 3 of 3
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    Near-field dynamics of broad area diode laser at very high pump levels
    (New York, NY : American Inst. of Physics, 2011) Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsaesser, T.
    Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale.
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    Semiconductor saturable absorber mirror mode-locked Yb:YAP laser
    (Washington, DC : Soc., 2022) Lin, Zhang-Lang; Xue, Wen-Ze; Zeng, Huang-Jun; Zhang, Ge; Zhao, Yongguang; Xu, Xiaodong; Xu, Jun; Loiko, Pavel; Mateos, Xavier; Lin, Haifeng; Petrov, Valentin; Wang, Li; Chen, Weidong
    We report on sub-30 fs pulse generation from a semiconductor saturable absorber mirror mode-locked Yb:YAP laser. Pumping by a spatially single-mode Yb fiber laser at 979 nm, soliton pulses as short as 29 fs were generated at 1091 nm with an average output power of 156 mW and a pulse repetition rate of 85.1 MHz. The maximum output power of the mode-locked Yb:YAP laser amounted to 320 mW for slightly longer pulses (32 fs) at an incident pump power of 1.52 W, corresponding to a peak power of 103 kW and an optical efficiency of 20.5%. To the best of our knowledge, this result represents the shortest pulses ever achieved from any solid-state Yb laser mode-locked by a slow, i.e., physical saturable absorber.
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    Watt-level femtosecond Tm-doped “mixed” sesquioxide ceramic laser in-band pumped by a Raman fiber laser at 1627 nm
    (Washington, DC : Soc., 2022) Zhang, Ning; Wang, Zhanxin; Liu, Shande; Jing, Wei; Huang, Hui; Huang, Zixuan; Tian, Kangzhen; Yang, Zhiyong; Zhao, Yongguang; Griebner, Uwe; Petrov, Valentin; Chen, Weidong
    We report on a semiconductor saturable absorber mirror mode-locked Tm:(Lu,Sc)2O3 ceramic laser in-band pumped by a Raman fiber laser at 1627 nm. The nonlinear refractive index (n2) of the Tm:(Lu,Sc)2O3 ceramic has been measured to be 4.66 × 10-20 m2/W at 2000 nm. An average output power up to 1.02 W at 2060 nm is achieved for transform-limited 280-fs pulses at a repetition rate of 86.5 MHz, giving an optical efficiency with respect to the absorbed pump power of 36.4%. Pulses as short as 66 fs at 2076 nm are produced at the expense of output power (0.3 W), corresponding to a spectral bandwidth of 69 nm. The present work reveals the potential of Tm3+-doped sesquioxide transparent ceramics for power scaling of femtosecond mode-locked bulk lasers emitting in the 2-μm spectral range.