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Si photonic-electronic monolithically integrated optical receiver with a built-in temperature-controlled wavelength filter
We present a Si photonic-electronic integrated ring-resonator based optical receiver that contains a temperature-controlled ring-resonator filter (RRF), a Ge photodetector, and receiver circuits in a single chip. The temperature controller automatically determines the RRF temperature at which the maximum transmission of the desired WDM signal is achieved and maintains this condition against any temperature or input wavelength fluctuation. This Si photonic-electronic integrated circuit is realized with 0.25-µm photonic BiCMOS technology, and its operation is successfully confirmed with measurement.
On-Chip Micro Temperature Controllers Based on Freestanding Thermoelectric Nano Films for Low-Power Electronics
Dense and flat freestanding Bi2Te3-based thermoelectric nano films were successfully fabricated by sputtering technology using a newly developed nano graphene oxide membrane as a substrate. On-chip micro temperature controllers were integrated using conventional micro-electromechanical system technology, to achieve energy-efficient temperature control for low-power electronics. The tunable equivalent thermal resistance enables an ultrahigh temperature control capability of 100 K mW−1 and an ultra-fast cooling rate exceeding 2000 K s−1, as well as excellent reliability of up to 1 million cycles.
In-situ and ex-situ measurements of thermal conductivity of supercapacitors
Thermal signature of supercapacitors are investigated in-situ and ex-situ using commercial supercapacitors. Regarding the in-situ method, four supercapacitors were connected in series, with thermocouples embedded between the supercapacitors. As the applied current was increased, the temperature measured at the intrinsic positions also increased. When cycling at a current density of 0.11Acm-2 the centre temperature increased by 14K compared to the stack surface temperature. This is an important figure as literature states that an increase of 10K leads to a corresponding decrease in the lifetime by a factor of 2. Using the obtained temperature profiles, the effective thermal conductivity of the stack was found to vary between 0.5WK-1m-1 and 1.0WK-1m-1, depending on the compaction of the stack. For the ex-situ measurements, the thermal conductivity and the thicknesses of the supercapacitor material layers were measured individually in order to determine the corresponding thermal conductivity of the stack. When using this method an effective thermal conductivity of the stack of 0.53 ± 0.06WK-1m-1 was obtained. The analysis also demonstrated that the main contributor to the thermal resistivity and conductivity of the supercapacitor construction is the electrodes. This demonstrates that when managing heat from supercapacitors it is important to focus on the thermal conductivity of the components materials.