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Subject: Tin oxides ×

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    Modulating the luminance of organic light-emitting diodes: Via optical stimulation of a photochromic molecular monolayer at transparent oxide electrode
    (Cambridge : RSC Publ., 2020) Ligorio, Giovanni; Cotella, Giovanni F.; Bonasera, Aurelio; Zorn Morales, Nicolas; Carnicella, Giuseppe; Kobin, Björn; Wang, Qiankun; Koch, Norbert; Hecht, Stefan; List-Kratochvil, Emil J.W.; Cacialli, Franco
    Self-assembled monolayers (SAMs) deposited on bottom electrodes are commonly used to tune charge carrier injection or blocking in optoelectronic devices. Beside the enhancement of device performance, the fabrication of multifunctional devices in which the output can be modulated by multiple external stimuli remains a challenging target. In this work, we report the functionalization of an indium tin oxide (ITO) electrode with a SAM of a diarylethene derivative designed for optically control the electronic properties. Following the demonstration of dense SAM formation and its photochromic activity, as a proof-of-principle, an organic light-emitting diode (OLED) embedding the light-responsive SAM-covered electrode was fabricated and characterized. Optically addressing the two-terminal device by irradiation with ultraviolet light doubles the electroluminescence. The original value can be restored reversibly by irradiation with visible light. This expanded functionality is based on the photoinduced modulation of the electronic structure of the diarylethene isomers, which impact the charge carriers' confinement within the emissive layer. This approach could be successfully exploited in the field of opto-communication technology, for example to fabricate opto-electronic logic circuits. © 2020 The Royal Society of Chemistry.
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    XPS investigations of MOCVD tin oxide thin layers on Si nanowires array
    (Amsterdam : Elsevier, 2018) Turishchev, S.Yu.; Chuvenkova, Olga; Parinova, V.E.; Koyuda, D.A.; Chumakov, Ratibor G.; Presselt, Martin; Schleusener, Alexander; Sivakov, Vladimir
    Tin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers. The composition of the formed layers were studied by high-resolution X-ray photoelectron spectroscopy of tin (Sn 3d) and oxygen (O 1 s) atoms core levels. The ion beam etching was applied to study the layers depth composition profiles. The composition studies of grown tin oxide layers is shown that the surface of layers contains tin dioxide, but the deeper part contains intermediate tin dioxide and metallic tin phases.