2021, Giannakopoulos, Stavros, Sourikopoulos, Ilias, Stampoulidis, Leontios, Ostrovskyy, Pylyp, Teply, Florian, Tittelbach-Helmrich, K., Panic, Goran, Fischer, Gunter, Grabowski, Alexander, Zirath, Herbert, Ayzac, Philippe, Venet, Norbert, Maho, Anaëlle, Sotom, Michel, Jones, Shaun, Wood, Grahame, Oxtoby, Ian

We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for a flip-chip assembly into a mid-board optics (MBO) optical transceiver module. The ICs are designed in the IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness in radiation environments and high-speed performance featuring bipolar transistors (HBTs) with fT/fMAX values of up to 250/340 GHz. Besides hardening by technology, radiation-hardened-by-design (RHBD) components are used, including enclosed layout transistors (ELTs) and digital logic cells. We report design features of the ICs and the module, and provide performance data from post-layout simulations. We present radiation evaluation data on analog devices and digital cells, which indicate that the transceiver ICs will reliably operate at typical total ionizing dose (TID) levels and single event latch-up thresholds found in geostationary satellites.

2013, Pimenov, Alexander, Vladimirov, Andrei G., Gurevich, Svetlana V., Panajotov, Krassimir, Huyet, Guillaume, Tlidi, Mustapha

Control of the motion of cavity solitons is one the central problems in nonlinear optical pattern formation. We report on the impact of the phase of the time-delayed optical feedback and carrier lifetime on the self-mobility of localized structures of light in broad area semiconductor cavities. We show both analytically and numerically that the feedback phase strongly affects the drift instability threshold as well as the velocity of cavity soliton motion above this threshold. In addition we demonstrate that non-instantaneous carrier response in the semiconductor medium is responsible for the increase in critical feedback rate corresponding to the drift instability.