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- ItemObservation of orbital order in the van der Waals material 1T−TiSe2(College Park, MD : APS, 2022) Peng, Yingying; Guo, Xuefei; Xiao, Qian; Li, Qizhi; Strempfer, Jörg; Choi, Yongseong; Yan, Dong; Luo, Huixia; Huang, Yuqing; Jia, Shuang; Janson, Oleg; Abbamonte, Peter; van den Brink, Jeroen; van Wezel, JasperBesides magnetic and charge order, regular arrangements of orbital occupation constitute a fundamental order parameter of condensed matter physics. Even though orbital order is difficult to identify directly in experiments, its presence was firmly established in a number of strongly correlated, three-dimensional Mott insulators. Here, reporting resonant x-ray-scattering experiments on the layered van der Waals compound 1T-TiSe2, we establish that the known charge density wave in this weakly correlated, quasi-two-dimensional material corresponds to an orbital ordered phase. Our experimental scattering results are consistent with first-principles calculations that bring to the fore a generic mechanism of close interplay between charge redistribution, lattice displacements, and orbital order. It demonstrates the essential role that orbital degrees of freedom play in TiSe2, and their importance throughout the family of correlated van der Waals materials.
- ItemResearch Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition(Melville, NY : AIP Publ., 2017) Hilmi, Isom; Lotnyk, Andriy; Gerlach, Jürgen W.; Schumacher, Philipp; Rauschenbach, BerndAn attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.
- ItemSelective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy(Melville, NY : American Inst. of Physics, 2018) Munshi, A. Mazid; Kim, Dong-Chul; Heimdal, Carl Philip; Heilmann, Martin; Christiansen, Silke H.; Vullum, Per Erik; van Helvoort, Antonius T. J.; Weman, HelgeWide-bandgap group III-nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high-quality III-nitride semiconductors on conventional single-crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two-dimensional material, can be used as a substrate for growing high-quality III-V semiconductors via quasi-van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single-layer graphene using metal-organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN/GaN/AlGaN overgrowth on the six {10 (1) over bar1} semi-polar side facets of the nanopyramids, intense room-temperature cathodoluminescence emission is observed at 365 nm with whispering gallery-like modes. This work opens up a route for achieving III-nitride opto-electronic devices on graphene substrates in the ultraviolet region for future applications.
- ItemSpatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam(London : Nature Publishing Group, 2021) Heilmann, Martin; Deinhart, Victor; Tahraoui, Abbes; Höflich, Katja; Lopes, J. Marcelo J.The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alternative to the currently mostly employed mechanical transfer, which is problematic in terms of scaling and reproducibility. Controlling the location of the nuclei formation remains a key challenge in vdWE. Here, a focused He ion beam is used to deterministically place defects in graphene substrates, which serve as preferential nucleation sites for the growth of insulating, 2D hexagonal boron nitride (h-BN). Therewith a mask-free, selective-area vdWE (SAvdWE) is demonstrated, in which nucleation yield and crystal quality of h-BN are controlled by the ion beam parameters used for defect formation. Moreover, h-BN grown via SAvdWE is shown to exhibit electron tunneling characteristics comparable to those of mechanically transferred layers, thereby lying the foundation for a reliable, high-density array fabrication of 2D heterostructures for device integration via defect engineering in 2D substrates.
- ItemDimethyl carbonate synthesis from carbon dioxide using ceria–zirconia catalysts prepared using a templating method: characterization, parametric optimization and chemical equilibrium modeling(London : RSC Publishing, 2016) Kumar, Praveen; With, Patrick; Srivastava, Vimal Chandra; Shukla, Kartikeya; Gläser, Roger; Mishra, Indra ManiIn this paper, a series of CexZr1−xO2 solid solution spheres were synthesized by exo- and endo-templating methods and tested for dimethyl carbonate (DMC) synthesis using direct conversion of CO2. The synthesized catalysts were characterized by X-ray diffraction (XRD), N2-physisorption, scanning electron microscopy (SEM), and CO2/NH3-temperature-programmed desorption (TPD). Formation of CexZr1−xO2 solid solutions with tetragonal and cubic crystal structures depending on cerium/zirconium compositions was confirmed by XRD analysis. The specific surface area of the mixed oxide decreased and the average pore diameter increased with an increase in the ceria content, with the exception of the mixed oxides with x = 0.4–0.5 i.e. Ce0.4Zr0.6O2 and Ce0.5Zr0.5O2. The basic and acidic site density of the synthesized catalysts was in the order: ZrO2 < CeO2 < Ce0.5Zr0.5O2, and the basic and acidic site density per unit area followed the same order. The best Ce0.5Zr0.5O2 catalyst was further used for the optimization of reaction conditions such as reaction time, reaction temperature, catalyst dose and reusability for DMC synthesis. Furthermore, study of chemical equilibrium modeling was done using the Peng–Robinson–Stryjek–Vera equation of state (PRSV-EoS) along with the van der Waals one-fluid reaction condition so as to calculate change of Gibbs free energy (ΔG°) and heat of reaction (ΔH°).