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Subject: atom probe tomography ×

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Now showing 1 - 3 of 3
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    On the process of co-deformation and phase dissolution in a hard-soft immiscible CuCo alloy system during high-pressure torsion deformation
    (Amsterdam : Elsevier, 2016) Bachmaier, Andrea; Schmauch, Jörg; Aboulfadl, Hisham; Verch, Andreas; Motz, Christian
    In this study, dual phase Cusingle bondCo composites with a total immiscibility in the solid state and a very different initial phase strength are deformed by severe plastic deformation. Nanocrystalline supersaturated solid solutions are reached in all Cusingle bondCo composites independent of the initial composition. The deformation and mechanical mixing process is studied thoroughly by combining scanning electron microscopy, transmission electron microscopy, three-dimensional atom probe tomography and nanoindentation. The indentation hardness of the Cu and Co phase and its evolution as a function of the applied strain is linked to deformation and mechanical mixing process to gain a better understanding how the phase strength mismatch of the Cu and Co phase effects the amount of co-deformation and deformation-induced mixing. Our results show that co-deformation is not a necessary requirement to achieve mechanical mixing.
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    Grain Boundary Phases in NbFeSb Half-Heusler Alloys: A New Avenue to Tune Transport Properties of Thermoelectric Materials
    (Weinheim : Wiley-VCH, 2023) Bueno Villoro, Ruben; Zavanelli, Duncan; Jung, Chanwon; Mattlat, Dominique Alexander; Hatami Naderloo, Raana; Pérez, Nicolás; Nielsch, Kornelius; Snyder, Gerald Jeffrey; Scheu, Christina; He, Ran; Zhang, Siyuan
    Many thermoelectric materials benefit from complex microstructures. Grain boundaries (GBs) in nanocrystalline thermoelectrics cause desirable reduction in the thermal conductivity by scattering phonons, but often lead to unwanted loss in the electrical conductivity by scattering charge carriers. Therefore, modifying GBs to suppress their electrical resistivity plays a pivotal role in the enhancement of thermoelectric performance, zT. In this work, different characteristics of GB phases in Ti-doped NbFeSb half-Heusler compounds are revealed using a combination of scanning transmission electron microscopy and atom probe tomography. The GB phases adopt a hexagonal close-packed lattice, which is structurally distinct from the half-Heusler grains. Enrichment of Fe is found at GBs in Nb0.95Ti0.05FeSb, but accumulation of Ti dopants at GBs in Nb0.80Ti0.20FeSb, correlating to the bad and good electrical conductivity of the respective GBs. Such resistive to conductive GB phase transition opens up new design space to decouple the intertwined electronic and phononic transport in thermoelectric materials.
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    Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
    (Milton Park : Taylor & Francis, 2016) Pristovsek, Markus; Han, Yisong; Zhu, Tongtong; Oehler, Fabrice; Tang, Fengzai; Oliver, Rachel A.; Humphreys, Colin J.; Tytko, Darius; Choi, Pyuck-Pa; Raabe, Dierk; Brunner, Frank; Weyers, Markus
    We benchmarked growth, microstructure and photo luminescence (PL) of (112-2) InGaN quantum wells (QWs) against (0001) and (112-0). In incorporation, growth rate and the critical thickness of (112-2) QWs are slightly lower than (0001) QWs, while the In incorporation on (112-0) is reduced by a factor of three. A small step-bunching causes slight fluctuations of the emission wavelength. Transmission electron microscopy as well as atom probe tomography (APT) found very flat interfaces with little In segregation even for 20% In content. APT frequency distribution analysis revealed some deviation from a random InGaN alloy, but not as severe as for (112-0). The slight deviation of (112-2) QWs from an ideal random alloy did not broaden the 300 K PL, the line widths were similar for (112-2) and (0001) while (112-0) QWs were broader. Despite the high structural quality and narrow PL, the integrated PL signal at 300 K was about 4 lower on (112-2) and more than 10 lower on (112-0).