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- ItemA coarse‐grained electrothermal model for organic semiconductor devices(Chichester, West Sussex : Wiley, 2022) Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe derive a coarse-grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift-diffusion- based electrothermal models with thermistor-type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss–Fermi integral and mobility functions depending on the temperature, charge-carrier density, and field strength, which is required for a proper description of organic devices.
- ItemNumerical simulation of carrier transport in semiconductor devices at cryogenic temperatures(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Kantner, Markus; Koprucki, ThomasAt cryogenic temperatures the electron-hole plasma in semiconductor materials becomes strongly degenerate, leading to very sharp internal layers, extreme depletion in intrinsic domains and strong nonlinear diffusion. As a result, the numerical simulation of the drift-diffusion system suffers from serious convergence issues using standard methods. We consider a one-dimensional p-i-n diode to illustrate these problems and present a simple temperature-embedding scheme to enable the numerical simulation at cryogenic temperatures. The method is suitable for forward-biased devices as they appear e.g. in optoelectronic applications.