Filters

2019 - 201912020 - 20241

More filters

2020 - 20242
Reset filters

Settings

Subject: electric current × WGL Institute: IFWD ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Self-assembly of Co/Pt stripes with current-induced domain wall motion towards 3D racetrack devices
    ([London] : Nature Publishing Group UK, 2024) Fedorov, Pavel; Soldatov, Ivan; Neu, Volker; Schäfer, Rudolf; Schmidt, Oliver G.; Karnaushenko, Daniil
    Modification of the magnetic properties under the induced strain and curvature is a promising avenue to build three-dimensional magnetic devices, based on the domain wall motion. So far, most of the studies with 3D magnetic structures were performed in the helixes and nanowires, mainly with stationary domain walls. In this study, we demonstrate the impact of 3D geometry, strain and curvature on the current-induced domain wall motion and spin-orbital torque efficiency in the heterostructure, realized via a self-assembly rolling technique on a polymeric platform. We introduce a complete 3D memory unit with write, read and store functionality, all based on the field-free domain wall motion. Additionally, we conducted a comparative analysis between 2D and 3D structures, particularly addressing the influence of heat during the electric current pulse sequences. Finally, we demonstrated a remarkable increase of 30% in spin-torque efficiency in 3D configuration.
  • Thumbnail Image
    Item
    Spectral dynamics of shift current in ferroelectric semiconductor SbSI
    (Washington : National Academy of Sciences, 2019) Sotome, M.; Nakamura, M.; Fujioka, J.; Ogino, M.; Kaneko, Y.; Morimoto, T.; Zhang, Y.; Kawasaki, M.; Nagaosa, N.; Tokura, Y.; Ogawa, N.
    Photoexcitation in solids brings about transitions of electrons/ holes between different electronic bands. If the solid lacks an inversion symmetry, these electronic transitions support spontaneous photocurrent due to the geometric phase of the constituting electronic bands: the Berry connection. This photocurrent, termed shift current, is expected to emerge on the timescale of primary photoexcitation process. We observe ultrafast evolution of the shift current in a prototypical ferroelectric semiconductor antimony sulfur iodide (SbSI) by detecting emitted terahertz electromagnetic waves. By sweeping the excitation photon energy across the bandgap, ultrafast electron dynamics as a source of terahertz emission abruptly changes its nature, reflecting a contribution of Berry connection on interband optical transition. The shift excitation carries a net charge flow and is followed by a swing over of the electron cloud on a subpicosecond timescale. Understanding these substantive characters of the shift current with the help of first-principles calculation will pave the way for its application to ultrafast sensors and solar cells.