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Subject: electronic properties ×

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Now showing 1 - 5 of 5
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    Synthesis and charge transfer characteristics of a ruthenium–acetylide complex
    (London : Royal Society of Chemistry, 2020) Kuhrt, Robert; Ho, Po-Yuen; Hantusch, Martin; Lissel, Franziska; Blacque, Olivier; Knupfer, Martin; Büchner, Bernd
    A novel ruthenium–acetylide complex was synthesised and characterised in solid state and solution. Thin films of the complex were evaporated on silver and gold foils in ultra high vacuum in order to probe the electronic properties with photoemission spectroscopy. The charge transfer characteristics of the complex with the strong acceptor F6TCNNQ were investigated by UV-vis absorption in solution as well as at an interface with photoemission spectroscopy. A new excitation in the former optical gap of the pristine materials was probed in solution. Moreover, it was possible to identify the oxidised complex as well as the reduced acceptor by X-ray photoemission spectroscopy. In particular, our data reveal that oxidation of the complex mainly occurs at the Ru centre. The charge transfer can be characterised as localised and mainly ionic although signs of a reaction of the acceptors aminogroups with the ruthenium–acetylide complex were found.
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    Impact of size, shape and composition on piezoelectric effects and the electronic properties of InGaAs/GaAs quantum dots
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2007) Schliwa, Andrei; Winkelnkemper, Momme; Bimberg, Dieter
    The strain fields in and around self-organized In(Ga)As/GaAs quantum dots (QD) sensitively depend on QD geometry, average InGaAs composition and the In/Ga distribution profile. Piezoelectric fields of varying size are one result of these strain fields. We study systematically a large variety of realistic QD geometries and composition profiles, and calculate the linear and quadratic parts of the piezoelectric field. The balance of the two orders depends strongly on the QD shape and composition. For pyramidal InAs QDs with sharp interfaces a strong dominance of the second order fields is found. Upon annealing the first order terms become dominant, resulting in a reordering of the electron p- and d-states and a reorientation of the hole wavefunctions.
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    Simulating the electronic properties of semiconductor nanostructures using multiband $kcdot p$ models
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Marquardt, Oliver
    The eight-band $kcdot p$ formalism been successfully applied to compute the electronic properties of a wide range of semiconductor nanostructures in the past and can be considered the backbone of modern semiconductor heterostructure modelling. However, emerging novel material systems and heterostructure fabrication techniques raise questions that cannot be answered using this well-established formalism, due to its intrinsic limitations. The present article reviews recent studies on the calculation of electronic properties of semiconductor nanostructures using a generalized multiband $kcdot p$ approach that allows both the application of the eight-band model as well as more sophisticated approaches for novel material systems and heterostructures.
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    Micro- and nano-scale engineering and structures shape architecture at nucleation from In-As-Sb-P composition liquid phase on an InAs(100) surface
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Gambaryan, Karen M.; Marquardt, Oliver; Boeck, Torsten; Trampert, Achim
    In this review paper we present results of the growth, characterization and electronic properties of In(As,Sb,P) composition strain-induced micro- and nanostructures. Nucleation is performed from In-As-Sb-P quaternary composition liquid phase in Stranski--Krastanow growth mode using steady-state liquid phase epitaxy. Growth features and the shape transformation of pyramidal islands, lens-shape and ellipsoidal type-II quantum dots (QDs), quantum rings and QD-molecules are under consideration. It is shown that the application of a quaternary In(As,Sb,P) composition wetting layer allows not only more flexible control of lattice-mismatch between the wetting layer and an InAs(100) substrate, but also opens up new possibilities for nanoscale engineering and nanoarchitecture of several types of nanostructures. HR-SEM, AFM, TEM and STM are used for nanostructure characterization. Optoelectronic properties of the grown structures are investigated by FTIR and photoresponse spectra measurements. Using an eight-band $mathbfkcdotmathbfp$ model taking strain and built-in electrostatic potentials into account, the electronic properties of a wide range of InAs$_1-x-y$Sb$_x$P$_y$ QDs and QD-molecules are computed. Two types of QDs mid-infrared photodetectors are fabricated and investigated. It is shown that the incorporation of QDs allows to improve some output device characteristics, in particularly sensitivity, and to broaden the spectral range.
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    Nucleation chronology and electronic properties of In(As,Sb,P) graded composition quantum dots grown on InAs(100) substrate
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Gambaryan, Karen M.; Boeck, Torsten; Trampert, Achim; Marquardt, Oliver
    We provide a detailed study of nucleation process, characterization, electronic and optical properties of graded composition quantum dots (GCQDs) grown from In-As-Sb-P composition liquid phase on an InAs(100) substrate in the Stranski-Krastanov growth mode. Our GCQDs exhibit diameters from 10 to 120 nm and heights from 2 to 20 nm with segregation profiles having a maximum Sb content of approximately 20% at the top and a maximum P content of approximately 15% at the bottom of the GCQDs so that hole confinement is expected in the upper parts of the GCQDs. Using an eight-band k · p model taking strain and built-in electrostatic potentials into account, we have computed the hole ground state energies and charge densities for a wide range of InAs1-x-ySbxPy GCQDs as close as possible to the systems observed in experiment. Finally, we have obtained an absorption spectrum for an ensemble of GCQDs by combining data from both experiment and theory. Excellent agreement between measured and simulated absorption spectra indicates that such GCQDs can be grown following a theory-guided design for application in specific devices.