2017, Boschker, Jos E., Calarco, Raffaella

Phase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging. Phase change materials with a high structural quality, such as offered by epitaxial films, are needed in order to study the fundamental properties of phase change materials and to improve our understanding of this materials class. Here, we review the progress made in the growth of crystalline phase change materials by physical methods, such as molecular beam epitaxy, sputtering, and pulsed laser deposition. First, we discuss the difference and similarities between these physical deposition methods and the crystal structures of Ge2Sb2Te5, the prototype phase change material. Next, we focus on the growth of epitiaxial GST films on (0 0 1)- and (1 1 1)-oriented substrates, leading to the conclusion that (1 1 1)-oriented substrates are preferred for the growth of phase change materials. Finally, the growth of GeTe/Sb2Te3 superlattices on amorphous and single crystalline substrates is discussed.

2023, Wawra, Jonas, Nielsch, Kornelius, Hühne, Ruben

Substrate-induced strains can significantly influence the structural properties of epitaxial thin films. In ferroelectrics, this might lead to significant changes in the functional properties due to the strong electromechanical coupling in those materials. To study this in more detail, epitaxial Ba0.7Sr0.3TiO3 films, which have a perovskite structure and a structural phase transition close to room temperature, were grown with different thicknesses on REScO3 (RE–rare earth element) substrates having a smaller lattice mismatch compared to SrTiO3. A fully strained SrRuO3 bottom electrode and Pt top contacts were used to achieve a capacitor-like architecture. Different X-ray diffraction techniques were applied to study the microstructure of the films. Epitaxial films with a higher crystalline quality were obtained on scandates in comparison to SrTiO3, whereas the strain state of the functional layer was strongly dependent on the chosen substrate and the thickness. Differences in permittivity and a non-linear polarization behavior were observed at higher temperatures, suggesting that ferroelectricity is supressed under tensile strain conditions in contrast to compressive strain for our measurement configuration, while a similar reentrant relaxor-like behavior was found in all studied layers below 0°C.

2021, Magalhaes, Bruno, Engelhardt, Stefan, Molin, Christian, Gebhardt, Sylvia E., Nielsch, Kornelius, Hühne, Ruben

Substantial efforts are dedicated worldwide to use lead-free materials for environmentally friendly processes in electrocaloric cooling. Whereas investigations on bulk materials showed that Na0.5Bi0.5TiO3 (NBT)-based compounds might be suitable for such applications, our aim is to clarify the feasibility of epitaxial NBT-based thin films for more detailed investigations on the correlation between the composition, microstructure, and functional properties. Therefore, NBT-based thin films were grown by pulsed laser deposition on different single crystalline substrates using a thin epitaxial La0.5Sr0.5CoO3 layer as the bottom electrode for subsequent electric measurements. Structural characterization revealed an undisturbed epitaxial growth of NBT on lattice-matching substrates with a columnar microstructure, but high roughness and increasing grain size with larger film thickness. Dielectric measurements indicate a shift of the phase transition to lower temperatures compared to bulk samples as well as a reduced permittivity and increased losses at higher temperatures. Whereas polarization loops taken at −100 °C revealed a distinct ferroelectric behavior, room temperature data showed a significant resistive contribution in these measurements. Leakage current studies confirmed a non-negligible conductivity between the electrodes, thus preventing an indirect characterization of the electrocaloric properties of these films.

2015, Zaima, Shigeaki, Nakatsuka, Osamu, Taoka, Noriyuki, Kurosawa, Masashi, Takeuchi, Wakana, Sakashita, Mitsuo

We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials.

2022, Shipulin, Ilya A., Thomas, Aleena Anna, Holleis, Sigrid, Eisterer, Michael, Nielsch, Kornelius, Hühne, Ruben

We report the local structural and superconducting properties of undoped and Ag-doped YBa2Cu3O6+x (YBCO) films with a thickness of up to 1 µm prepared by pulsed laser deposition on SrTiO3 (STO) single crystals and on ion-beam-assisted deposition (IBAD) and rolling-assisted biaxially textured substrate (RABiTS)-based metal templates. X-ray diffraction demonstrates the high crystalline quality of the films on both single crystalline substrates and metal-based templates, respectively. Although there was only a slight decrease in Tc of up to 1.5 K for the Ag-doped YBCO films on all substrates, we found significant changes in their transport characteristics. The effect of the silver doping mainly depended on the concentration of silver, the type of substrate, and the temperature and magnetic field. In general, the greatest improvement in Jc over a wide range of magnetic fields and temperatures was observed for the 5%Ag-doped YBCO films on STO substrates, showing a significant increase compared to undoped films. Furthermore, a slight Jc improvement was observed for the 2%Ag-doped YBCO films on the RABiTS templates at temperatures below 65 K, whereas Jc decreased for the Ag-doped films on IBAD-MgO-based templates compared to undoped YBCO films. Using detailed electron microscopy studies, small changes in the local microstructure of the Ag-doped YBCO films were revealed; however, no clear correlation was found with the transport properties of the films.

2000, Erbert, G., Brugge, F., Fechner, I., Fredrich, D., Gielow, M., Hofmann, L., Klehr, A., Klein, A., Krause, A., Knauer, A., Olschewsky, R., Oster, A., Rechenberg, I., Ressel, P., Sebastian, J., Selent, R., Smirnitzki, V., Tessaro, T., Thiemann, M., Thies, A., Vogel, K., Wenzel, H., Weyers, M., Würfel, J., Wochatz, P.

[no abstract available]