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Complementing thermosteric sea level rise estimates
Thermal expansion of seawater has been one of the most important contributors to global sea level rise (SLR) over the past 100 years. Yet, observational estimates of this volumetric response of the world's oceans to temperature changes are sparse and mostly limited to the ocean's upper 700 m. Furthermore, only a part of the available climate model data is sufficiently diagnosed to complete our quantitative understanding of thermosteric SLR (thSLR). Here, we extend the available set of thSLR diagnostics from the Coupled Model Intercomparison Project Phase 5 (CMIP5), analyze those model results in order to complement upper-ocean observations and enable the development of surrogate techniques to project thSLR using vertical temperature profile and ocean heat uptake time series. Specifically, based on CMIP5 temperature and salinity data, we provide a compilation of thermal expansion time series that comprise 30 % more simulations than currently published within CMIP5. We find that 21st century thSLR estimates derived solely based on observational estimates from the upper 700 m (2000 m) would have to be multiplied by a factor of 1.39 (1.17) with 90 % uncertainty ranges of 1.24 to 1.58 (1.05 to 1.31) in order to account for thSLR contributions from deeper levels. Half (50 %) of the multi-model total expansion originates from depths below 490 ± 90 m, with the range indicating scenario-to-scenario variations. To support the development of surrogate methods to project thermal expansion, we calibrate two simplified parameterizations against CMIP5 estimates of thSLR: one parameterization is suitable for scenarios where hemispheric ocean temperature profiles are available, the other, where only the total ocean heat uptake is known (goodness of fit: ±5 and ±9 %, respectively).
Time-dependent simulation of thermal lensing in high-power broad-area semiconductor lasers
We propose a physically realistic and yet numerically applicable thermal model to account for short and long term self-heating within broad-area lasers. Although the temperature increase is small under pulsed operation, a waveguide that is formed within a few-ns-long pulse can result in a transition from a gain-guided to an index-guided structure, leading to near and far field narrowing. Under continuous wave operation the longitudinally varying temperature profile is obtained self-consistently. The resulting unfavorable narrowing of the near field can be successfully counteracted by etching trenches.
An existence result for a class of electrothermal drift-diffusion models with Gauss--Fermi statistics for organic semiconductors
This work is concerned with the analysis of a drift-diffusion model for the electrothermal behavior of organic semiconductor devices. A "generalized Van Roosbroeck'' system coupled to the heat equation is employed, where the former consists of continuity equations for electrons and holes and a Poisson equation for the electrostatic potential, and the latter features source terms containing Joule heat contributions and recombination heat. Special features of organic semiconductors like Gauss--Fermi statistics and mobilities functions depending on the electric field strength are taken into account. We prove the existence of solutions for the stationary problem by an iteration scheme and Schauder's fixed point theorem. The underlying solution concept is related to weak solutions of the Van Roosbroeck system and entropy solutions of the heat equation. Additionally, for data compatible with thermodynamic equilibrium, the uniqueness of the solution is verified. It was recently shown that self-heating significantly influences the electronic properties of organic semiconductor devices. Therefore, modeling the coupled electric and thermal responses of organic semiconductors is essential for predicting the effects of temperature on the overall behavior of the device. This work puts the electrothermal drift-diffusion model for organic semiconductors on a sound analytical basis.