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Subject: organic semiconductor ×

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Now showing 1 - 6 of 6
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    A coarse‐grained electrothermal model for organic semiconductor devices
    (Chichester, West Sussex : Wiley, 2022) Glitzky, Annegret; Liero, Matthias; Nika, Grigor
    We derive a coarse-grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift-diffusion- based electrothermal models with thermistor-type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss–Fermi integral and mobility functions depending on the temperature, charge-carrier density, and field strength, which is required for a proper description of organic devices.
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    Charge transfer characteristics of F6TCNNQ–gold interface
    (Chichester [u.a.] : Wiley, 2020) Kuhrt, Robert; Hantusch, Martin; Knupfer, Martin; Büchner, Bernd
    The metal–organic interface between polycrystalline gold and hexafluorotetracyanonaphthoquinodimethane (F6TCNNQ) was investigated by photoelectron spectroscopy with the focus on the charge transfer characteristics from the metal to the molecule. The valence levels, as well as the core levels of the heterojunction, indicate a full electron transfer and a change in the chemical environment. The changes are observed in the first F6TCNNQ layers, whereas for further film growth, only neutral F6TCNNQ molecules could be detected. New occupied states below the Fermi level were observed in the valence levels, indicating a lowest unoccupied molecular orbital (LUMO) occupation due to the charge transfer. A fitting of the spectra reveals the presence of a neutral and a charged F6TCNNQ molecules, but no further species were present.
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    An existence result for a class of electrothermal drift-diffusion models with Gauss--Fermi statistics for organic semiconductors
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Glitzky, Annegret; Liero, Matthias; Nika, Grigor
    This work is concerned with the analysis of a drift-diffusion model for the electrothermal behavior of organic semiconductor devices. A "generalized Van Roosbroeck'' system coupled to the heat equation is employed, where the former consists of continuity equations for electrons and holes and a Poisson equation for the electrostatic potential, and the latter features source terms containing Joule heat contributions and recombination heat. Special features of organic semiconductors like Gauss--Fermi statistics and mobilities functions depending on the electric field strength are taken into account. We prove the existence of solutions for the stationary problem by an iteration scheme and Schauder's fixed point theorem. The underlying solution concept is related to weak solutions of the Van Roosbroeck system and entropy solutions of the heat equation. Additionally, for data compatible with thermodynamic equilibrium, the uniqueness of the solution is verified. It was recently shown that self-heating significantly influences the electronic properties of organic semiconductor devices. Therefore, modeling the coupled electric and thermal responses of organic semiconductors is essential for predicting the effects of temperature on the overall behavior of the device. This work puts the electrothermal drift-diffusion model for organic semiconductors on a sound analytical basis.
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    A coarse-grained electrothermal model for organic semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2021) Glitzky, Annegret; Liero, Matthias; Nika, Grigor
    We derive a coarse-grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift-diffusion based electrothermal models with thermistor type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss--Fermi integral and mobility functions depending on the temperature, charge-carrier density, and field strength, which is required for a proper description of organic devices.
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    Drift-diffusion modeling, analysis and simulation of organic semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Doan, Duy-Hai; Glitzky, Annegret; Liero, Matthias
    We discuss drift-diffusion models for charge-carrier transport in organic semiconductor devices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The former leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlinear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauders fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics.
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    Self-heating effects in organic semiconductor devices enhanced by positive temperature feedback
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2012) Fischer, Axel; Pahner, Paul; Lüssem, Björn; Leo, Karl; Scholz, Reinhard; Koprucki, Thomas; Fuhrmann, Jürgen; Gärtner, Klaus; Glitzky, Annegret
    We studied the influence of heating effects in an organic device containing a layer sequence of n-doped / intrinsic / n-doped C60 between crossbar metal electrodes. A strong positive feedback between current and temperature occurs at high current densities beyond 100 A/cm2, as predicted by the extended Gaussian disorder model (EGDM) applicable to organic semiconductors. These devices give a perfect setting for studying the heat transport at high power densities because C60 can withstand temperatures above 200ʿ C. Infrared images of the device and detailed numerical simulations of the heat transport demonstrate that the electrical circuit produces a superposition of a homogeneous power dissipation in the active volume and strong heat sources localized at the contact edges ...