Search Results
Drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices
2019, Doan, Duy Hai, Fischer, Axel, Fuhrmann, Jürgen, Glitzky, Annegret, Liero, Matthias
We present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
Unipolar drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices
2019, Fuhrmann, Jürgen, Doan, Duy Hai, Glitzky, Annegret, Liero, Matthias, Nika, Grigor
We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.
Hybrid finite-volume/finite-element schemes for p(x)-Laplace thermistor models
2017, Fuhrmann, Jürgen, Glitzky, Annegret, Liero, Matthias
We introduce an empirical PDE model for the electrothermal description of organic semiconductor devices by means of current and heat flow. The current flow equation is of p(x)-Laplace type, where the piecewise constant exponent p(x) takes the non-Ohmic behavior of the organic layers into account. Moreover, the electrical conductivity contains an Arrhenius-type temperature law. We present a hybrid finite-volume/finite-element discretization scheme for the coupled system, discuss a favorite discretization of the p(x)-Laplacian at hetero interfaces, and explain how path following methods are applied to simulate S-shaped current-voltage relations resulting from the interplay of self-heating and heat flow.