Browsing by Author "Gajewski, Herbert"
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- Item3D-Simulation von Halbleiterdetektoren : Schlussbericht(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2001) Gajewski, Herbert[no abstract available]
- ItemBildsegmentation zur Untersuchung von Streulichtbildern bei der laseroptischen Diagnose von rheumatoider Arthritis(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2007) Gajewski, Herbert; Griepentrog, J.A.; Mielke, A.; Beuthan, J.; Zabarylo, U.; Minet, O.Optical imaging in biomedicine is governed by the light absorption and scattering interaction on microscopic and macroscopic constituents in the medium. Therefore, light scattering characteristics of human tissue correlates with the stage of some diseases. In the near infrared range the scattering event with the coefficient approximately two orders of magnitude greater than absorption plays a dominant role. The potential of an experimental laser diode based setup for the transillumination of rheumatoid finger joints and the pattern of the stray light detection are demonstrated. For evaluating the scattering light images a new non-local image segmentation method is presented. Regarding a noisy picture as a multicomponent mixture of gray scaled particles, this method minimizes a non-convex free energy functional under the constraint of mass conservation of the components. Contrary to constructing equilibrium distributions as steady states of an adequate evolution equation, a direct descent method for the free energy is used to separate the components of the image.
- ItemClassical solutions of drift-diffusion equations for semiconductor devices: the 2D case(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2006) Kaiser, Hans-Christian; Neidhardt, Hagen; Rehberg, Joachim; Gajewski, Herbert; Gröger, Konrad; Zacharias, KlausWe regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we reformulate the (generalized) van Roosbroeck system as an evolution equation for the potentials to the driving forces of the currents of electrons and holes. This evolution equation falls into a class of quasi-linear parabolic systems which allow unique, local in time solution in certain Lebesgue spaces. In particular, it turns out that the divergence of the electron and hole current is an integrable function. Hence, Gauss' theorem applies, and gives the foundation for space discretization of the equations by means of finite volume schemes. Moreover, the strong differentiability of the electron and hole density in time is constitutive for the implicit time discretization scheme. Finite volume discretization of space, and implicit time discretization are accepted custom in engineering and scientific computing. ---This investigation puts special emphasis on non-smooth spatial domains, mixed boundary conditions, and heterogeneous material compositions, as required in electronic device simulation.
- ItemA gradient structure for reaction-diffusion systems and for energy-drift-diffusion systems : dedicated to Herbert Gajewski on the occasion of his 70th birthday(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Mielke, Alexander; Gajewski, HerbertIn recent years the theory of Wasserstein distances has opened up a new treatment of the diffusion equations as gradient systems, where the entropy takes the role of the driving functional and where the space is equipped with the Wasserstein metric. We show that this structure can be generalized to closed reaction-diffusion systems, where the free energy (or the entropy) is the driving functional and further conserved quantities may exists, like the total number of chemical species. The metric is constructed by using the dual dissipation potential, which is a convex function of the chemical potentials. In particular, it is possible to treat diffusion and reaction terms simultaneously. The same ideas extend to semiconductor equations involving the electron and hole densities, the electrostatic potential, and the temperature.
- ItemWIAS-TeSCA - Two-dimensional semi-conductor analysis package(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Gajewski, Herbert; Liero, Matthias; Nürnberg, Reiner; Stephan, HolgerWIAS-TeSCA (Two- and three-dimensional semiconductor analysis package) is a simulation tool for the numerical simulation of charge transfer processes in semiconductor structures, especially in semiconductor lasers. It is based on the drift-diffusion model and considers a multitude of additional physical effects, like optical radiation, temperature influences and the kinetics of deep impurities. Its efficiency is based on the analytic study of the strongly nonlinear system of partial differential equations – the van Roosbroeck system – which describes the electron and hole currents. Very efficient numerical procedures for both the stationary and transient simulation have been implemented. WIAS-TeSCA has been successfully used in the research and industrial development of new electronic and optoelectronic semiconductor devices such as transistors, diodes, sensors, detectors and lasers and has already proved its worth many times in the planning and optimization of these devices. It covers a broad spectrum of applications, from heterobipolar transistor (mobile telephone systems, computer networks) through high-voltage transistors (power electronics) and semiconductor laser diodes (fiber optic communication systems, medical technology) to radiation detectors (space research, high energy physics). WIAS-TeSCA is an efficient simulation tool for analyzing and designing modern semiconductor devices with a broad range of performance that has proved successful in solving many practical problems. Particularly, it offers the possibility to calculate self-consistently the interplay of electronic, optical and thermic effects.