WIAS-TeSCA - Two-dimensional semi-conductor analysis package

Abstract

WIAS-TeSCA (Two- and three-dimensional semiconductor analysis package) is a simulation tool for the numerical simulation of charge transfer processes in semiconductor structures, especially in semiconductor lasers. It is based on the drift-diffusion model and considers a multitude of additional physical effects, like optical radiation, temperature influences and the kinetics of deep impurities. Its efficiency is based on the analytic study of the strongly nonlinear system of partial differential equations – the van Roosbroeck system – which describes the electron and hole currents. Very efficient numerical procedures for both the stationary and transient simulation have been implemented. WIAS-TeSCA has been successfully used in the research and industrial development of new electronic and optoelectronic semiconductor devices such as transistors, diodes, sensors, detectors and lasers and has already proved its worth many times in the planning and optimization of these devices. It covers a broad spectrum of applications, from heterobipolar transistor (mobile telephone systems, computer networks) through high-voltage transistors (power electronics) and semiconductor laser diodes (fiber optic communication systems, medical technology) to radiation detectors (space research, high energy physics). WIAS-TeSCA is an efficient simulation tool for analyzing and designing modern semiconductor devices with a broad range of performance that has proved successful in solving many practical problems. Particularly, it offers the possibility to calculate self-consistently the interplay of electronic, optical and thermic effects.