Browsing by Author "Nielsch, K."
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- ItemAdvances in magneto-ionic materials and perspectives for their application(College Park, MD : American Institute of Physics, 2021) Nichterwitz, M.; Honnali Sudheendra, S.; Kutuzau, M.; Guo, S.; Zehner, J.; Nielsch, K.; Leistner, K.The possibility of tuning magnetic material properties by ionic means is exciting both for basic science and, especially in view of the excellentenergy efficiency and room temperature operation, for potential applications. In this perspective, we shortly introduce the functionality ofmagneto-ionic materials and focus on important recent advances in this field. We present a comparative overview of state-of-the-art magneto-ionic materials considering the achieved magnetoelectric voltage coefficients for magnetization and coercivity and the demonstrated timescales for magneto-ionic switching. Furthermore, the application perspectives of magneto-ionic materials in data storage and computing,magnetic actuation, and sensing are evaluated. Finally, we propose potential research directions to push this field forward and tackle thechallenges related to future applications
- ItemAnalysis of electronic properties frommagnetotransport measurements on Ba(Fe1-xNix)2As2 thin films(Basel : MDPI AG, 2020) Shipulin, I.; Richter, S.; Thomas, A.A.; Nielsch, K.; Hühne, R.; Martovitsky, V.We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1-xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(Fe1-xNix)2As2 single crystals shows good agreement, which confirms the high quality of the obtained films.
- ItemCompositional complexity dependence of dislocation density and mechanical properties in high entropy alloy systems(Amsterdam : Elsevier, 2020) Thirathipviwat, P.; Song, G.; Bednarcik, J.; Kühn, U.; Gemming, T.; Nielsch, K.; Han, J.This study focuses on a quantitative analysis of dislocation accumulation after cold plastic deformation and mechanical properties of FeNiCoCrMn and TiNbHfTaZr high entropy alloys (HEAs) which are single phase fcc and bcc solid solutions, respectively. In order to study the role of compositional complexity from unary to quinary compositions on dislocation accumulation and mechanical properties after plastic deformation, the single solid solution phase forming sub-alloys of the two HEAs were investigated. All studied samples revealed a large plastic deformability under cold-rotary swaging process by 85–90% area reduction without intermediate annealing. The dislocation density of all studied samples, determined by Williamson-Hall method on synchrotron X-ray diffraction patterns, were between 1014 - 1015 m−2 dependent on the alloy composition. The level of dislocation density after plastic deformation is not only affected by the number of constituent element but the lattice distortion and intrinsic properties in terms of stacking fault energy, modulus misfit, and melting point also impact the dislocation storage. The level of dislocation density determines the level of mechanical properties because of a resistance to dislocation motions. The hardness and yield compressive strength of the studied samples are proportional to the level of dislocation density.
- ItemCorrection: Electrochemically deposited nanocrystalline InSb thin films and their electrical properties (Journal of Materials Chemistry C (2016) 4 (1345-1350) DOI: 10.1039/C5TC03656A)(London : RSC Publ., 2019) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.There was an error in eqn (3) which was reproduced from the literature and used for the interpretation of the results. The calculations (using the equations from an original work from 1987) were done according the correct version of eqn (3) presented below:. (Table Presented). © 2019 The Royal Society of Chemistry.
- ItemDiscovery of TaFeSb-based half-Heuslers with high thermoelectric performance(London : Nature Publishing Group, 2019) Zhu, H.; Mao, J.; Li, Y.; Sun, J.; Wang, Y.; Zhu, Q.; Li, G.; Song, Q.; Zhou, J.; Fu, Y.; He, R.; Tong, T.; Liu, Z.; Ren, W.; You, L.; Wang, Z.; Luo, J.; Sotnikov, A.; Bao, J.; Nielsch, K.; Chen, G.; Singh, D.J.; Ren, Z.Discovery of thermoelectric materials has long been realized by the Edisonian trial and error approach. However, recent progress in theoretical calculations, including the ability to predict structures of unknown phases along with their thermodynamic stability and functional properties, has enabled the so-called inverse design approach. Compared to the traditional materials discovery, the inverse design approach has the potential to substantially reduce the experimental efforts needed to identify promising compounds with target functionalities. By adopting this approach, here we have discovered several unreported half-Heusler compounds. Among them, the p-type TaFeSb-based half-Heusler demonstrates a record high ZT of ~1.52 at 973 K. Additionally, an ultrahigh average ZT of ~0.93 between 300 and 973 K is achieved. Such an extraordinary thermoelectric performance is further verified by the heat-to-electricity conversion efficiency measurement and a high efficiency of ~11.4% is obtained. Our work demonstrates that the TaFeSb-based half-Heuslers are highly promising for thermoelectric power generation.
- ItemDiscovery of ZrCoBi based half Heuslers with high thermoelectric conversion efficiency(London : Nature Publishing Group, 2018) Zhu, H.; He, R.; Mao, J.; Zhu, Q.; Li, C.; Sun, J.; Ren, W.; Wang, Y.; Liu, Z.; Tang, Z.; Sotnikov, A.; Wang, Z.; Broido, D.; Singh, D.J.; Chen, G.; Nielsch, K.; Ren, Z.Thermoelectric materials are capable of converting waste heat into electricity. The dimensionless figure-of-merit (ZT), as the critical measure for the material's thermoelectric performance, plays a decisive role in the energy conversion efficiency. Half-Heusler materials, as one of the most promising candidates for thermoelectric power generation, have relatively low ZTs compared to other material systems. Here we report the discovery of p-type ZrCoBi-based half-Heuslers with a record-high ZT of ∼1.42 at 973 K and a high thermoelectric conversion efficiency of ∼9% at the temperature difference of ∼500 K. Such an outstanding thermoelectric performance originates from its unique band structure offering a high band degeneracy (N v) of 10 in conjunction with a low thermal conductivity benefiting from the low mean sound velocity (v m ∼2800 m s-1). Our work demonstrates that ZrCoBi-based half-Heuslers are promising candidates for high-temperature thermoelectric power generation.
- ItemThe effect of Ti or Zr additions on the microstructure and magnetic properties of MnAl-C alloys(Amsterdam [u.a.] : Elsevier, 2021) Feng, L.; Nielsch, K.; Woodcock, T.As-transformed and hot-deformed samples of MnAl-C alloys with Ti or Zr additions have been produced and characterized using magnetometry, X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Both Ti and Zr additions in MnAl-C alloys form carbide primary phases, TiC and ZrC, which consume the carbon meant to be dissolved in the metastable τ-phase to stabilize it against decomposition. With these two additions, the Curie temperature of τ-phase increases while its stability against decomposition decreases. After hot deformation, the MnAl-C alloys with Ti or Zr additions have lower polarisation and remanence due to the reduced stability of the τ-phase. Adding extra carbon along with Ti to a MnAl-C alloy in order to compensate for the C lost on formation of TiC restored the original stability of the τ-phase. After hot-deformation, this alloy exhibited a lower polarisation and remanence owing to the unexpected formation of the γ2-phase.
- ItemEfficiency of Magnetostatic Protection Using Nanostructured Permalloy Shielding Coatings Depending on Their Microstructure(Basel : MDPI, 2021) Zubar, T.; Grabchikov, S.; Kotelnikova, A.; Kaniukov, E.; Kutuzau, M.; Leistner, K.; Nielsch, K.; Vershinina, T.; Tishkevich, D.; Kanafyev, O.; Kozlovskiy, A.; Zdorovets, M.; Fedosyuk, V.; Trukhanov, A.The effect of microstructure on the efficiency of shielding or shunting of the magnetic fluxby permalloy shields was investigated in the present work. For this purpose, the FeNi shieldingcoatings with different grain structures were obtained using stationary and pulsed electrodeposition.The coatings’ composition, crystal structure, surface microstructure, magnetic domain structure, andshielding efficiency were studied. It has been shown that coatings with 0.2–0.6μm grains have adisordered domain structure. Consequently, a higher value of the shielding efficiency was achieved,but the working range was too limited. The reason for this is probably the hindered movement of thedomain boundaries. Samples with nanosized grains have an ordered two-domain magnetic structurewith a permissible partial transition to a superparamagnetic state in regions with a grain size of lessthan 100 nm. The ordered magnetic structure, the small size of the domain, and the coexistenceof ferromagnetic and superparamagnetic regions, although they reduce the maximum value ofthe shielding efficiency, significantly expand the working range in the nanostructured permalloyshielding coatings. As a result, a dependence between the grain and domain structure and theefficiency of magnetostatic shielding was found.
- ItemElectrochemically deposited nanocrystalline InSb thin films and their electrical properties(Cambridge : Royal Society of Chemistry, 2016) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).
- ItemEntropy of conduction electrons from transport experiments(Basel : MDPI AG, 2020) Pérez, N.; Wolf, C.; Kunzmann, A.; Freudenberger, J.; Krautz, M.; Weise, B.; Nielsch, K.; Schierning, G.The entropy of conduction electrons was evaluated utilizing the thermodynamic definition of the Seebeck coefficient as a tool. This analysis was applied to two dierent kinds of scientific questions that can-if at all-be only partially addressed by other methods. These are the field-dependence of meta-magnetic phase transitions and the electronic structure in strongly disordered materials, such as alloys. We showed that the electronic entropy change in meta-magnetic transitions is not constant with the applied magnetic field, as is usually assumed. Furthermore, we traced the evolution of the electronic entropy with respect to the chemical composition of an alloy series. Insights about the strength and kind of interactions appearing in the exemplary materials can be identified in the experiments.
- ItemFluctuation-dissipation in thermoelectric sensors(Les-Ulis : EDP Science, 2023) Tran, N.A.M.; Dutt, A.S.; Pulumati, N.B.; Reith, H.; Hu, A.; Dumont, A.; Nielsch, K.; Tremblay, A.-M.S.; Schierning, G.; Reulet, B.; Szkopek, T.Thermoelectric materials exhibit correlated transport of charge and heat. The Johnson-Nyquist noise formula 4k B T R for the spectral density of voltage fluctuations accounts for fluctuations associated solely with Ohmic dissipation. Applying the fluctuation-dissipation theorem, we generalize the Johnson-Nyquist formula for thermoelectrics, finding an enhanced voltage fluctuation spectral density 4k B T R(1 + Z D T) at frequencies below a thermal cut-off frequency f T, where Z D T is the dimensionless thermoelectric device figure of merit. The origin of the enhancement in voltage noise is thermoelectric coupling of temperature fluctuations. We use a wideband , integrated thermoelectric micro-device to experimentally confirm our findings. Measuring the Z D T enhanced voltage noise, we experimentally resolve temperature fluctuations with a root mean square amplitude of at a mean temperature of 295 K. We find that thermoelectric devices can be used for thermometry with sufficient resolution to measure the fundamental temperature fluctuations described by the fluctuation-dissipation theorem.
- ItemThe Influence of Cu-Additions on the Microstructure, Mechanical and Magnetic Properties of MnAl-C Alloys(London : Nature Publishing Group, 2020) Jürries, F.; Freudenberger, J.; Nielsch, K.; Woodcock, T.G.Alloys of the form (Mn54Al44C2)100-xCux (with x = 0, 1, 2, 4 and 6) were produced by induction melting. After homogenisation and quenching, most of the alloys consist entirely of the retained ε-phase, except for x = 6, in which the κ-phase was additionally present. After subsequent annealing, the alloys with x ≤ 2 consist entirely of a Cu-doped, ferromagnetic τ-phase, whereas the alloys with x > 2 additionally contain the κ-phase. The polarisation of the alloys at an applied field of 14 T decreases with increasing Cu-content, which is attributed i) to the dilution of the magnetic moment of the τ-phase unit cell by the Cu atoms, which do not carry a magnetic moment, and ii) at higher Cu-contents, to the formation of the κ-phase, which has a much lower polarisation than the τ-phase and therefore dilutes the net polarisation of the alloys. The Curie temperature was not affected by the Cu-additions. The stress needed to die-upset the alloys with x ≤ 2 was similar to that of the undoped alloy, whereas it was much lower for x = 4 and 6, due to the presence of intergranular layers of the κ-phase. The extrinsic magnetic properties of alloys with x ≤ 2 were improved by die-upsetting, whereas decomposition of the τ-phase during processing had a deleterious effect on the magnetic properties for higher Cu-additions.
- ItemMicrostructural defects in hot deformed and as-transformed τ-MnAl-C(Lausanne : Elsevier, 2021) Zhao, P.; Feng, L.; Nielsch, K.; Woodcock, T.G.In this study, detailed microstructural characterisation has been conducted in both as-transformed and hot deformed samples of τ-MnAl-C using transmission electron microscopy. After hot deformation, true twins, dislocations, intrinsic stacking faults and precipitates of Mn3AlC are the main defects in the recrystallised grains. True twins and order twins were distinguished based on differences in their diffraction patterns. A significant fraction of non-recrystallised grains existed, which had microstructures based on combinations of high densities of true twins, dislocations, and deformation bands. The formation of the Mn3AlC precipitates was confirmed and related to the reduction of saturation magnetization and the increase in the Curie temperature of τ-MnAl-C after hot deformation. Antiphase boundaries, which are believed to act as nucleation sites for reverse domains, were not observed in the hot deformed sample.
- ItemModulations in martensitic Heusler alloys originate from nanotwin ordering(London : Nature Publishing Group, 2018) Gruner, M.E.; Niemann, R.; Entel, P.; Pentcheva, R.; Rößler, U.K.; Nielsch, K.; Fähler, S.Heusler alloys exhibiting magnetic and martensitic transitions enable applications like magnetocaloric refrigeration and actuation based on the magnetic shape memory effect. Their outstanding functional properties depend on low hysteresis losses and low actuation fields. These are only achieved if the atomic positions deviate from a tetragonal lattice by periodic displacements. The origin of the so-called modulated structures is the subject of much controversy: They are either explained by phonon softening or adaptive nanotwinning. Here we used large-scale density functional theory calculations on the Ni2MnGa prototype system to demonstrate interaction energy between twin boundaries. Minimizing the interaction energy resulted in the experimentally observed ordered modulations at the atomic scale, it explained that a/b twin boundaries are stacking faults at the mesoscale, and contributed to the macroscopic hysteresis losses. Furthermore, we found that phonon softening paves the transformation path towards the nanotwinned martensite state. This unified both opposing concepts to explain modulated martensite.
- ItemReducing the nucleation barrier in magnetocaloric Heusler alloys by nanoindentation(New York : American Institute of Physics, 2016) Niemann, R.; Hahn, S.; Diestel, A.; Backen, A.; Schultz, L.; Nielsch, K.; Wagner, M.F.-X.; Fähler, S.Magnetocaloric materials are promising as solid state refrigerants for more efficient and environmentally friendly cooling devices. The highest effects have been observed in materials that exhibit a first-order phase transition. These transformations proceed by nucleation and growth which lead to a hysteresis. Such irreversible processes are undesired since they heat up the material and reduce the efficiency of any cooling application. In this article, we demonstrate an approach to decrease the hysteresis by locally changing the nucleation barrier. We created artificial nucleation sites and analyzed the nucleation and growth processes in their proximity. We use Ni-Mn-Ga, a shape memory alloy that exhibits a martensitic transformation. Epitaxial films serve as a model system, but their high surface-to-volume ratio also allows for a fast heat transfer which is beneficial for a magnetocaloric regenerator geometry. Nanoindentation is used to create a well-defined defect. We quantify the austenite phase fraction in its proximity as a function of temperature which allows us to determine the influence of the defect on the transformation.
- ItemResearch Update: Magnetoionic control of magnetization and anisotropy in layered oxide/metal heterostructures(New York : American Institute of Physics, 2016) Duschek, K.; Pohl, D.; Fähler, S.; Nielsch, K.; Leistner, K.Electric field control of magnetization and anisotropy in layered structures with perpendicular magnetic anisotropy is expected to increase the versatility of spintronic devices. As a model system for reversible voltage induced changes of magnetism by magnetoionic effects, we present several oxide/metal heterostructures polarized in an electrolyte. Room temperature magnetization of Fe-O/Fe layers can be changed by 64% when applying only a few volts in 1M KOH. In a next step, the bottom interface of the in-plane magnetized Fe layer is functionalized by an L10 FePt(001) underlayer exhibiting perpendicular magnetic anisotropy. During subsequent electrocrystallization and electrooxidation, well defined epitaxial Fe3O4/Fe/FePt heterostructures evolve. The application of different voltages leads to a thickness change of the Fe layer sandwiched between Fe-O and FePt. At the point of transition between rigid magnet and exchange spring magnet regime for the Fe/FePt bilayer, this induces a large variation of magnetic anisotropy.
- ItemThermoelectric properties of silicon and recycled silicon sawing waste(Peking : Chinese Ceramic Society, 2019) He, R.; Heyn, W.; Thiel, F.; Pérez, N.; Damm, C.; Pohl, D.; Rellinghaus, B.; Reimann, C.; Beier, M.; Friedrich, J.; Zhu, H.; Ren, Z.; Nielsch, K.; Schierning, G.Large-scale-applicable thermoelectric materials should be both self-sustaining, in order to survive long-term duty cycles, and nonpolluting. Among all classes of known thermoelectric materials, these criteria reduce the available candidate pool, leaving silicon as one of the remaining options. Here we first review the thermoelectric properties of various silicon-related materials with respect to their morphologies and microstructures. We then report the thermoelectric properties of silicon sawing wastes recycled from silicon wafer manufacturing. We obtain a high power factor of ∼32 μW cm−1 K−2 at 1273 K with 6% phosphorus substitution in the Si crystal, a value comparable to that of phosphorus-doped silicon-germanium alloys. Our work suggests the large-scale thermoelectric applicability of recycled silicon that would otherwise contribute to the millions of tons of industrial waste produced by the semiconductor industry.
- ItemThickness dependence of the anomalous Nernst effect and the Mott relation of Weyl semimetal Co2MnGa thin films(College Park, MD : American Physical Society, 2020) Park, G.-H.; Reichlova, H.; Schlitz, R.; Lammel, M.; Markou, A.; Swekis, P.; Ritzinger, P.; Kriegner, D.; Noky, J.; Gayles, J.; Sun, Y.; Felser, C.; Nielsch, K.; Goennenwein, S.T.B.; Thomas, A.We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 μV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magnetothermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magnetothermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.
- ItemTowards a reliable bridge joint between REBCO coated conductors(Bristol : IOP Publ., 2020) Kirchner, A.; Nielsch, K.; Hühne, R.REBa2Cu3O7-x (REBCO; RE = Y, Gd) coated conductor wires are commercially available up to a length of about 1 km. However, for large-scale devices like superconducting coils for high-field magnets several kilometres of a coated conductors are required. Therefore, it is desirable to use joints, which exhibit similar superconducting properties as the coated conductor itself. In this study, we jointed commercial REBCO coated conductors by a two-step procedure. At first, a superconducting soldering solution was developed and deposited on unstabilized coated conductors via chemical solution deposition. The soldering precursor is based on a Cu-rich solution with a metal cation ratio Y:Ba:Cu of 1:2:4. Secondly, a piece of the coated conductor was delaminated between the superconducting and the buffer layer and used as bridge between two other conductors covered with the soldering layer. Annealing the resulting bridge joint under pressure results in a mechanical stable configuration. © Published under licence by IOP Publishing Ltd.
- ItemTowards uniform electrochemical porosification of bulk HVPE-grown GaN(Pennington, NJ : Electrochemical Society Inc., 2019) Monaico, E.; Moise, C.; Mihai, G.; Ursaki, V.V.; Leistner, K.; Tiginyanu, I.M.; Enachescu, M.; Nielsch, K.In this paper, we report on results of a systematic study of porous morphologies obtained using anodization of HVPE-grown crystalline GaN wafers in HNO3, HCl, and NaCl solutions. The anodization-induced nanostructuring is found to proceed in different ways on N-and Ga-faces of polar GaN substrates. Complex pyramidal structures are disclosed and shown to be composed of regions with the degree of porosity modulated along the pyramid surface. Depending on the electrolyte and applied anodization voltage, formation of arrays of pores or nanowires has been evidenced near the N-face of the wafer. By adjusting the anodization voltage, we demonstrate that both current-line oriented pores and crystallographic pores are generated. In contrast to this, porosification of the Ga-face proceeds from some imperfections on the surface and develops in depth up to 50 μm, producing porous matrices with pores oriented perpendicularly to the wafer surface, the thickness of the pore walls being controlled by the applied voltage. The observed peculiarities are explained by different values of the electrical conductivity of the material near the two wafer surfaces.