Please use this identifier to cite or link to this item: https://oa.tib.eu/renate/handle/123456789/4866
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dc.rights.licenseCC BY-NC-ND 3.0 Unportedeng
dc.contributor.authorLim, Carolin B.-
dc.contributor.authorAjay, Akhil-
dc.contributor.authorLähnemann, Jonas-
dc.contributor.authorBougerol, Catherine-
dc.contributor.authorMonroy, Eva-
dc.date.accessioned2020-02-12T06:32:17Z-
dc.date.available2020-02-12T06:32:17Z-
dc.date.issued2017-
dc.identifier.urihttps://doi.org/10.34657/137-
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4866
dc.description.abstractThis paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared ranges (SWIR, MIR, and FIR, respectively). The standard c-plane crystallographic orientation is considered for wells absorbing in the SWIR and MIR spectral regions, whereas the FIR structures are grown along the nonpolar m-axis. In all cases, we compare the characteristics of Ge-doped and Si-doped samples with the same design and various doping levels. The use of Ge appears to improve the mosaicity of the highly lattice-mismatched GaN/AlN heterostructures. However, when reducing the lattice mismatch, the mosaicity is rather determined by the substrate and does not show any dependence on the dopant nature or concentration. From the optical point of view, by increasing the dopant density, we observe a blueshift of the photoluminescence in polar samples due to the screening of the internal electric field by free carriers. In the ISB absorption, on the other hand, there is a systematic improvement of the linewidth when using Ge as a dopant for high doping levels, whatever the spectral region under consideration (i.e. different QW size, barrier composition and crystallographic orientation).eng
dc.language.isoengeng
dc.publisherBristol : IOPeng
dc.relation.ispartofseriesSemiconductor Science and Technologyeng
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/eng
dc.subjectGaNeng
dc.subjectAlGaNeng
dc.subjectquantum well,eng
dc.subjectnonpolareng
dc.subjectintersubbandeng
dc.subjectdopingeng
dc.subjectgermaniumeng
dc.subject.ddc530eng
dc.titleEffect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructuresger
dc.typearticleeng
dc.typeTexteng
dc.description.versionacceptedVersioneng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
dc.bibliographicCitation.firstPage125002eng
dc.bibliographicCitation.lastPage76eng
dc.bibliographicCitation.volume32eng
dc.relation.doihttps://doi.org/10.1088/1361-6641/aa919c-
dcterms.bibliographicCitation.journalTitleSemiconductor Science and Technologyeng
tib.accessRightsopenAccesseng
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Lim, Carolin B., Akhil Ajay, Jonas Lähnemann, Catherine Bougerol and Eva Monroy, 2017. Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures. 2017. Bristol : IOP
Lim, C. B., Ajay, A., Lähnemann, J., Bougerol, C. and Monroy, E. (2017) “Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures.” Bristol : IOP. doi: https://doi.org/10.1088/1361-6641/aa919c.
Lim C B, Ajay A, Lähnemann J, Bougerol C, Monroy E. Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures. Vol. 32. Bristol : IOP; 2017.
Lim, C. B., Ajay, A., Lähnemann, J., Bougerol, C., & Monroy, E. (2017). Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures (Version acceptedVersion, Vol. 32). Version acceptedVersion, Vol. 32. Bristol : IOP. https://doi.org/https://doi.org/10.1088/1361-6641/aa919c
Lim C B, Ajay A, Lähnemann J, Bougerol C, Monroy E. Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures. 2017;32. doi:https://doi.org/10.1088/1361-6641/aa919c


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