Terahertz transient stimulated emission from doped silicon

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dc.bibliographicCitation.firstPage106102eng
dc.bibliographicCitation.issue10eng
dc.bibliographicCitation.journalTitleAPL Photonicseng
dc.bibliographicCitation.volume5eng
dc.contributor.authorPavlov, S.G.
dc.contributor.authorDeßmann, N.
dc.contributor.authorPohl, A.
dc.contributor.authorZhukavin, R.K.
dc.contributor.authorKlaassen, T.O.
dc.contributor.authorAbrosimov, N.V.
dc.contributor.authorRiemann, H.
dc.contributor.authorRedlich, B.
dc.contributor.authorVan Der Meer, A.F.G.
dc.contributor.authorOrtega, J.-M.
dc.contributor.authorPrazeres, R.
dc.contributor.authorOrlova, E.E.
dc.contributor.authorMuraviev, A.V.
dc.contributor.authorShastin, V.N.
dc.contributor.authorHübers, H.-W.
dc.date.accessioned2021-10-20T11:49:34Z
dc.date.available2021-10-20T11:49:34Z
dc.date.issued2020
dc.description.abstractTransient-type stimulated emission in the terahertz (THz) frequency range has been achieved from phosphorus doped silicon crystals under optical excitation by a few-picosecond-long pulses generated by the infrared free electron lasers FELIX and CLIO. The analysis of the lasing threshold and emission spectra indicates that the stimulated emission occurs due to combined population inversion based lasing and stimulated Raman scattering. Giant gain has been obtained in the optically pumped silicon due to large THz cross sections of intracenter impurity transitions and resonant intracenter electronic scattering. The transient-type emission is formed under conditions when the pump pulse intervals exceed significantly the photon lifetime in the laser resonator. © 2020 Author(s).eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7063
dc.identifier.urihttps://doi.org/10.34657/6110
dc.language.isoengeng
dc.publisherMelville, NY : AIP Publishingeng
dc.relation.doihttps://doi.org/10.1063/5.0020654
dc.relation.essn2378-0967
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.otherCrystal impuritieseng
dc.subject.otherElectronseng
dc.subject.otherEmission spectroscopyeng
dc.subject.otherFree electron laserseng
dc.subject.otherOptical pumpingeng
dc.subject.otherSiliconeng
dc.subject.otherStimulated emissioneng
dc.subject.otherEmission spectrumseng
dc.subject.otherImpurity transitionseng
dc.subject.otherInfrared free electron laserseng
dc.subject.otherLasing thresholdeng
dc.subject.otherOptically pumpedeng
dc.subject.otherPhosphorus-dopedeng
dc.subject.otherPopulation inversionseng
dc.subject.otherTerahertz frequencieseng
dc.subject.otherUltrafast laserseng
dc.titleTerahertz transient stimulated emission from doped siliconeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIKZeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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