Normally-off GaN transistors for power applications
dc.bibliographicCitation.journalTitle | Journal of Physics: Conference Series | eng |
dc.bibliographicCitation.volume | 494 | |
dc.contributor.author | Hilt, O. | |
dc.contributor.author | Bahat-Treidel, E. | |
dc.contributor.author | Brunner, F. | |
dc.contributor.author | Knauer, A. | |
dc.contributor.author | Zhytnytska, R. | |
dc.contributor.author | Kotara, P. | |
dc.contributor.author | Wuerfl, J. | |
dc.date.available | 2019-06-28T12:40:15Z | |
dc.date.issued | 2014 | |
dc.description.abstract | Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated. | eng |
dc.description.version | publishedVersion | eng |
dc.format | application/pdf | |
dc.identifier.uri | https://doi.org/10.34657/1591 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/4408 | |
dc.language.iso | eng | eng |
dc.publisher | Milton Park : Taylor & Francis | eng |
dc.relation.doi | https://doi.org/10.1088/1742-6596/494/1/012001 | |
dc.rights.license | CC BY 3.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.gnd | Konferenzschrift | ger |
dc.subject.other | Heat problems | eng |
dc.subject.other | Thermoanalysis | eng |
dc.subject.other | Threshold voltage | eng |
dc.title | Normally-off GaN transistors for power applications | eng |
dc.type | Article | eng |
dc.type | Text | eng |
dcterms.event | MicroTherm 2013 - Microtechnology and Thermal Problems in Electronics, Łódz, Poland, 25-28 June 2013 | |
tib.accessRights | openAccess | eng |
wgl.contributor | FBH | eng |
wgl.subject | Physik | eng |
wgl.type | Konferenzbeitrag | eng |
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