Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)

dc.bibliographicCitation.firstPage179eng
dc.bibliographicCitation.journalTitleBeilstein Journal of Nanotechnologyeng
dc.bibliographicCitation.lastPage185eng
dc.bibliographicCitation.volume3
dc.contributor.authorHeld, Christian
dc.contributor.authorSeyller, Thomas
dc.contributor.authorBennewitz, Roland
dc.date.accessioned2016-03-24T17:38:44Z
dc.date.available2019-06-28T12:38:22Z
dc.date.issued2012
dc.description.abstractNoncontact atomic force microscopy provides access to several complementary signals, such as topography, damping, and contact potential. The traditional presentation of such data sets in adjacent figures or in colour-coded pseudo-three-dimensional plots gives only a qualitative impression. We introduce two-dimensional histograms for the representation of multichannel NC-AFM data sets in a quantitative fashion. Presentation and analysis are exemplified for topography and contact-potential data for graphene grown epitaxially on 6H-SiC(0001), as recorded by Kelvin probe force microscopy in ultrahigh vacuum. Sample preparations by thermal decomposition in ultrahigh vacuum and in an argon atmosphere are compared and the respective growth mechanisms discussed.
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1629
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4000
dc.language.isoengeng
dc.publisherFrankfurt am Main : Beilstein-Institut
dc.relation.doihttps://doi.org/10.3762/bjnano.3.19
dc.rights.licenseCC BY-ND 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by-nd/3.0/eng
dc.subject.ddc530
dc.subject.otherFM-AFMeng
dc.subject.othergrapheneeng
dc.subject.other6H-SiC(0001)eng
dc.subject.otherKPFMeng
dc.subject.otherSPMeng
dc.titleQuantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorINMeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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