Carrier Lifetime in Liquid-phase Crystallized Silicon on Glass
dc.bibliographicCitation.firstPage | 248 | |
dc.bibliographicCitation.lastPage | 254 | |
dc.bibliographicCitation.volume | 92 | |
dc.contributor.author | Vetter, Michael | |
dc.contributor.author | Gawlik, Annett | |
dc.contributor.author | Plentz, Jonathan | |
dc.contributor.author | Andrä, Gudrun | |
dc.contributor.editor | Ribeyron, Pierre-Jean | |
dc.contributor.editor | Cuevas, Andres | |
dc.contributor.editor | Weeber, Arthur | |
dc.contributor.editor | Ballif, Christophe | |
dc.contributor.editor | Glunz, Stefan | |
dc.contributor.editor | Poortmans, Jef | |
dc.contributor.editor | Brendel, Rolf | |
dc.contributor.editor | Aberle, Armin | |
dc.contributor.editor | Sinton, Ron | |
dc.contributor.editor | Verlinden, Pierre | |
dc.contributor.editor | Hahn, Giso | |
dc.date.accessioned | 2022-07-08T07:48:33Z | |
dc.date.available | 2022-07-08T07:48:33Z | |
dc.date.issued | 2016 | |
dc.description.abstract | Liquid-phase crystallized silicon on glass (LPCSG) presents a promising material to fabricate high quality silicon thin films, e.g. for solar cells and modules. Barrier layers and a doped amorphous silicon layer are deposited on the glass substrate followed by crystallization with a line focus laser beam. In this paper we introduce injection level dependent lifetime measurements generated by the quasi steady-state photoconductance decay method (QSSPC) to characterize LPCSG absorbers. This contactless method allows a determination of the LPCSG absorber quality already at an early stage of solar cell fabrication, and provides a monitoring of the absorber quality during the solar cell fabrication steps. We found minority carrier lifetimes higher than 200ns in our layers (e.g. n-type absorber with ND=2x1015cm-3) indicating a surface recombination velocity SBL<3000cm/s at the barrier layer/Si interface. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/9662 | |
dc.identifier.uri | https://doi.org/10.34657/8700 | |
dc.language.iso | eng | eng |
dc.publisher | Amsterdam [u.a.] : Elsevier | |
dc.relation.doi | https://doi.org/10.1016/j.egypro.2016.07.067 | |
dc.relation.essn | 1876-6102 | |
dc.relation.isbn | 978-1-5108-3043-1 | |
dc.relation.ispartof | Special issue: proceedings of the 6th International Conference on Silicon Photovoltaics (SiliconPV 2016) | |
dc.relation.ispartofseries | Energy procedia ; 92 | |
dc.rights.license | CC BY-NC-ND 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/4.0/ | |
dc.subject | carrier lifetime | eng |
dc.subject | laser crystallization | eng |
dc.subject | multicrystalline silicon | eng |
dc.subject | quasi steady-state photoconductance | eng |
dc.subject | thin film | eng |
dc.subject | Konferenzschrift | ger |
dc.subject.ddc | 620 | |
dc.title | Carrier Lifetime in Liquid-phase Crystallized Silicon on Glass | eng |
dc.type | bookPart | eng |
dc.type | Text | eng |
dcterms.bibliographicCitation.journalTitle | Energy procedia | |
tib.accessRights | openAccess | eng |
tib.relation.conference | 6th International Conference on Silicon Photovoltaics (SiliconPV 2016), 7–9 March 2016, Chambery, France | |
wgl.contributor | IPHT | ger |
wgl.subject | Ingenieurwissenschaften | ger |
wgl.type | Buchkapitel / Sammelwerksbeitrag | ger |
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