H2-dependent attachment kinetics and shape evolution in chemical vapor deposition graphene growth

dc.bibliographicCitation.volume2358
dc.contributor.authorMeca, Esteban
dc.contributor.authorShenoym, Vivek B.
dc.contributor.authorLowengrub, John
dc.date.accessioned2017-03-29T23:50:34Z
dc.date.available2019-06-28T08:05:28Z
dc.date.issued2016
dc.description.abstractExperiments on graphene growth through chemical vapor deposition (CVD) involving methane (CH4) and hydrogen (H2) gases reveal a complex shape evolution and a nonmonotonic dependence on the partial pressure of H2 (pH2). To explain these intriguing observations, we develop a microkinetic model for the stepwise decomposition of CH4 into mobile radicals and consider two possible mechanisms of attachment to graphene crystals: CH radicals to hydrogen-decorated edges of the crystals and C radicals to bare crystal edges. We derive an effective mass flux and an effective kinetic coefficient, both of which depend on pH2, and incorporate these into a phase field model. The model reproduces crystals observed in experiments. At small pH2, growth is limited by the kinetics of attachment while at large pH2 growth is limited because the effective mass flux is small. We also derive a simple analytical model that captures the non-monotone behavior, enables the two mechanisms of attachment to be distinguished and provides guidelines for CVD growth of defect-free 2D crystals.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.issn2198-5855
dc.identifier.urihttps://doi.org/10.34657/2496
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/2310
dc.language.isoengeng
dc.publisherBerlin : Weierstraß-Institut für Angewandte Analysis und Stochastikeng
dc.relation.ispartofseriesPreprint / Weierstraß-Institut für Angewandte Analysis und Stochastik , Volume 2358, ISSN 2198-5855eng
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc510eng
dc.titleH2-dependent attachment kinetics and shape evolution in chemical vapor deposition graphene growtheng
dc.typereporteng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitlePreprint / Weierstraß-Institut für Angewandte Analysis und Stochastikeng
tib.accessRightsopenAccesseng
wgl.contributorWIASeng
wgl.subjectMathematikeng
wgl.typeReport / Forschungsbericht / Arbeitspapiereng
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
878925481.pdf
Size:
1.72 MB
Format:
Adobe Portable Document Format
Description:
Collections