Optimal control of semiconductor melts by traveling magnetic fields

dc.bibliographicCitation.seriesTitleWIAS Preprintseng
dc.bibliographicCitation.volume2549
dc.contributor.authorNestler, Peter
dc.contributor.authorSchlömer, Nico
dc.contributor.authorKlein, Olaf
dc.contributor.authorSprekels, Jürgen
dc.contributor.authorTröltzsch, Fredi
dc.date.accessioned2019-03-09T03:38:24Z
dc.date.available2019-06-28T08:10:40Z
dc.date.issued2018
dc.description.abstractIn this paper, the optimal control of traveling magnetic fields in a process of crystal growth from the melt of semiconductor materials is considered. As controls, the phase shifts of the voltage in the coils of a heater-magnet module are employed to generate Lorentz forces for stirring the crystal melt in an optimal way. By the use of a new industrial heater-magnet module, the Lorentz forces have a stronger impact on the melt than in earlier technologies. It is known from experiments that during the growth process temperature oscillations with respect to time occur in the neighborhood of the solid-liquid interface. These oscillations may strongly influence the quality of the growing single crystal. As it seems to be impossible to suppress them completely, the main goal of optimization has to be less ambitious, namely, one tries to achieve oscillations that have a small amplitude and a frequency which is sufficiently high such that the solid-liquid interface does not have enough time to react to the oscillations. In our approach, we control the oscillations at a finite number of selected points in the neighborhood of the solidification front. The system dynamics is modeled by a coupled system of partial differential equations that account for instationary heat condution, turbulent melt flow, and magnetic field. We report on numerical methods for solving this system and for the optimization of the whole process. Different objective functionals are tested to reach the goal of optimization.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.issn2198-5855
dc.identifier.urihttps://doi.org/10.34657/2927
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/2756
dc.language.isoengeng
dc.publisherBerlin : Weierstraß-Institut für Angewandte Analysis und Stochastikeng
dc.relation.doihttps://doi.org/10.20347/WIAS.PREPRINT.2549
dc.relation.issn0946-8633eng
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc510eng
dc.subject.otherCzochralski methodeng
dc.subject.otherLorentz forceeng
dc.subject.otheroptimal controleng
dc.subject.otherNavier-Stokes equationseng
dc.subject.otherheat equationeng
dc.subject.otherMaxwell equationseng
dc.titleOptimal control of semiconductor melts by traveling magnetic fieldseng
dc.typeReporteng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorWIASeng
wgl.subjectMathematikeng
wgl.typeReport / Forschungsbericht / Arbeitspapiereng
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