Macro- and micro-strain in GaN nanowires on Si(111)

Simple item page
dc.bibliographicCitation.journalTitleNanotechnologyeng
dc.contributor.authorJenichen, Bernd
dc.contributor.authorBrandt, Oliver
dc.contributor.authorPfueller, Carsten
dc.contributor.authorDogan, Pinar
dc.contributor.authorKnelangen, Mathias
dc.contributor.authorTrampert, Achim
dc.date.accessioned2016-03-24T17:38:01Z
dc.date.available2019-06-28T12:38:11Z
dc.date.issued2011
dc.description.abstractWe analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from +-0.015% to +-0.03%.This micro-strain contributes to the linewidth observed in low-temperature photoluminescence spectra.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3946
dc.language.isoengeng
dc.publisherCambridge : arXiveng
dc.relation.urihttp://arxiv.org/abs/1206.2525
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc530eng
dc.titleMacro- and micro-strain in GaN nanowires on Si(111)eng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
Files
Collections
Physik