Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz
dc.bibliographicCitation.firstPage | 15213 | eng |
dc.bibliographicCitation.issue | 1 | eng |
dc.bibliographicCitation.journalTitle | AIP Advances | eng |
dc.bibliographicCitation.volume | 9 | eng |
dc.contributor.author | Schmalz, K. | |
dc.contributor.author | Rothbart, N. | |
dc.contributor.author | Eissa, M.H. | |
dc.contributor.author | Borngräber, J. | |
dc.contributor.author | Kissinger, D. | |
dc.contributor.author | Hübers, H.-W. | |
dc.date.accessioned | 2021-08-31T09:38:38Z | |
dc.date.available | 2021-08-31T09:38:38Z | |
dc.date.issued | 2019 | |
dc.description.abstract | This paper presents transmitter and receiver components for a gas spectroscopy system. The components are fabricated in IHP's 0.13 μm SiGe BiCMOS technology. Two fractional-N phase-locked loops are used to generate dedicated frequency ramps for the transmitter and receiver and frequency shift keying for the transmitter. The signal-to-noise ratio (SNR) for the absorption line of gaseous methanol (CH 3 OH) at 247.6 GHz is used as measure for the performance of the system. The implemented mixer-first receiver allows a high performance of the system due to its linearity up to an input power of -10 dBm. Using a transmitter-array with an output power of 7 dBm an SNR of 4660 (integration time of 2 ms for each data point) was obtained for the 247.6 GHz absorption line of CH 3 OH at 5 Pa. We have extended our single frequency-band system for 228 - 252 GHz to a 2-band system to cover the range 222 - 270 GHz by combining corresponding two transmitters and receivers with the frequency bands 222 - 256 GHz and 250 - 270 GHz on single transmitter- and receiver-chips. This 2-band operation allows a parallel spectra acquisition and therefore a high flexibility of data acquisition for the two frequency-bands. The 50 GHz bandwidth allows for highly specific and selective gas sensing. © 2019 Author(s). | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/6636 | |
dc.identifier.uri | https://doi.org/10.34657/5683 | |
dc.language.iso | eng | eng |
dc.publisher | New York, NY : American Inst. of Physics | eng |
dc.relation.doi | https://doi.org/10.1063/1.5066261 | |
dc.relation.essn | 2158-3226 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | BiCMOS technology | eng |
dc.subject.other | Bismuth alloys | eng |
dc.subject.other | Data acquisition | eng |
dc.subject.other | Si-Ge alloys | eng |
dc.subject.other | Transmitters | eng |
dc.subject.other | Absorption lines | eng |
dc.subject.other | Fractional-N phase-locked loops | eng |
dc.subject.other | High flexibility | eng |
dc.subject.other | Integration time | eng |
dc.subject.other | SiGe BiCMOS technology | eng |
dc.subject.other | Single frequency | eng |
dc.subject.other | Transmitter and receiver | eng |
dc.subject.other | Transmitter array | eng |
dc.subject.other | Signal to noise ratio | eng |
dc.title | Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IHP | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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