Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz

dc.bibliographicCitation.firstPage15213eng
dc.bibliographicCitation.issue1eng
dc.bibliographicCitation.journalTitleAIP Advanceseng
dc.bibliographicCitation.volume9eng
dc.contributor.authorSchmalz, K.
dc.contributor.authorRothbart, N.
dc.contributor.authorEissa, M.H.
dc.contributor.authorBorngräber, J.
dc.contributor.authorKissinger, D.
dc.contributor.authorHübers, H.-W.
dc.date.accessioned2021-08-31T09:38:38Z
dc.date.available2021-08-31T09:38:38Z
dc.date.issued2019
dc.description.abstractThis paper presents transmitter and receiver components for a gas spectroscopy system. The components are fabricated in IHP's 0.13 μm SiGe BiCMOS technology. Two fractional-N phase-locked loops are used to generate dedicated frequency ramps for the transmitter and receiver and frequency shift keying for the transmitter. The signal-to-noise ratio (SNR) for the absorption line of gaseous methanol (CH 3 OH) at 247.6 GHz is used as measure for the performance of the system. The implemented mixer-first receiver allows a high performance of the system due to its linearity up to an input power of -10 dBm. Using a transmitter-array with an output power of 7 dBm an SNR of 4660 (integration time of 2 ms for each data point) was obtained for the 247.6 GHz absorption line of CH 3 OH at 5 Pa. We have extended our single frequency-band system for 228 - 252 GHz to a 2-band system to cover the range 222 - 270 GHz by combining corresponding two transmitters and receivers with the frequency bands 222 - 256 GHz and 250 - 270 GHz on single transmitter- and receiver-chips. This 2-band operation allows a parallel spectra acquisition and therefore a high flexibility of data acquisition for the two frequency-bands. The 50 GHz bandwidth allows for highly specific and selective gas sensing. © 2019 Author(s).eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/6636
dc.identifier.urihttps://doi.org/10.34657/5683
dc.language.isoengeng
dc.publisherNew York, NY : American Inst. of Physicseng
dc.relation.doihttps://doi.org/10.1063/1.5066261
dc.relation.essn2158-3226
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.otherBiCMOS technologyeng
dc.subject.otherBismuth alloyseng
dc.subject.otherData acquisitioneng
dc.subject.otherSi-Ge alloyseng
dc.subject.otherTransmitterseng
dc.subject.otherAbsorption lineseng
dc.subject.otherFractional-N phase-locked loopseng
dc.subject.otherHigh flexibilityeng
dc.subject.otherIntegration timeeng
dc.subject.otherSiGe BiCMOS technologyeng
dc.subject.otherSingle frequencyeng
dc.subject.otherTransmitter and receivereng
dc.subject.otherTransmitter arrayeng
dc.subject.otherSignal to noise ratioeng
dc.titleTransmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHzeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIHPeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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