A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

dc.bibliographicCitation.firstPage135eng
dc.bibliographicCitation.issue1eng
dc.bibliographicCitation.lastPage141eng
dc.bibliographicCitation.volume8eng
dc.contributor.authorHjort, Filip
dc.contributor.authorEnslin, Johannes
dc.contributor.authorCobet, Munise
dc.contributor.authorBergmann, Michael A.
dc.contributor.authorGustavsson, Johan
dc.contributor.authorKolbe, Tim
dc.contributor.authorKnauer, Arne
dc.contributor.authorNippert, Felix
dc.contributor.authorHäusler, Ines
dc.contributor.authorWagner, Markus R.
dc.contributor.authorWernicke, Tim
dc.contributor.authorKneissl, Michael
dc.contributor.authorHaglund, Åsa
dc.date.accessioned2021-11-23T09:43:50Z
dc.date.available2021-11-23T09:43:50Z
dc.date.issued2021
dc.description.abstractUltraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280-320 nm) at room temperature, having an Al0.60Ga0.40N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electrochemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320-400 nm) to UVC (<280 nm). © 2020 American Chemical Society. All rights reserved.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7404
dc.identifier.urihttps://doi.org/10.34657/6451
dc.language.isoengeng
dc.publisherWashington, DC : ACS Publicationseng
dc.relation.doihttps://doi.org/10.1021/acsphotonics.0c01382
dc.relation.essn2330-4022
dc.relation.ispartofseriesACS Photonics 8 (2021), Nr. 1eng
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subjectAlGaNeng
dc.subjectdielectric DBReng
dc.subjectelectrochemical etchingeng
dc.subjectultravioleteng
dc.subjectUVBeng
dc.subjectvertical-cavity surface-emitting lasereng
dc.subject.ddc620eng
dc.subject.ddc530eng
dc.titleA 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Lasereng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleACS Photonicseng
tib.accessRightsopenAccesseng
wgl.contributorFBHeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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