Phenomenology of iron-assisted ion beam pattern formation on Si(001)

Pattern formation on Si(001) through 2 keV Kr+ ion beam erosion of Si(001) at an incident angle of # = 30° and in the presence of sputter codeposition or co-evaporation of Fe is investigated by using in situ scanning tunneling microscopy, ex situ atomic force microscopy and electron microscopy. The phenomenology of pattern formation is presented, and experiments are conducted to rule out or determine the processes of relevance in ion beam pattern formation on Si(001) with impurities. Special attention is given to the determination of morphological phase boundaries and their origin. Height fluctuations, local flux variations, induced chemical inhomogeneities, silicide formation and ensuing composition-dependent sputtering are found to be of relevance for pattern formation.

Keywords

Beam pattern, Chemical inhomogeneities, Co-evaporations, Codeposition, Ex-situ atomic force microscopy, Flux variation, In-situ scanning tunneling microscopies, Incident angles, Ion beam erosion, Pattern formation, Si(0 0 1), Silicide formation, Atomic force microscopy, Beam plasma interactions, Directional patterns (antenna), Ion beams, Ion bombardment, Ions, Krypton, Scanning tunneling microscopy, Silicides, Silicon

URI

https://doi.org/10.34657/4410
https://oa.tib.eu/renate/handle/123456789/5781

Citation

MacKo, S., Frost, F., Engler, M., Hirsch, D., Höche, T., Grenzer, J., & Michely, T. (2011). Phenomenology of iron-assisted ion beam pattern formation on Si(001). 13. https://doi.org//10.1088/1367-2630/13/7/073017

Collections

Physik

License

CC BY-NC-SA 3.0 Unported

https://creativecommons.org/licenses/by-nc-sa/3.0/

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