Semimetal to semiconductor transition in Bi/TiO2 core/shell nanowires
dc.bibliographicCitation.firstPage | 263 | eng |
dc.bibliographicCitation.issue | 1 | eng |
dc.bibliographicCitation.journalTitle | Nanoscale advances | eng |
dc.bibliographicCitation.lastPage | 271 | eng |
dc.bibliographicCitation.volume | 3 | eng |
dc.contributor.author | Kockert, M. | |
dc.contributor.author | Mitdank, R. | |
dc.contributor.author | Moon, H. | |
dc.contributor.author | Kim, J. | |
dc.contributor.author | Mogilatenko, A. | |
dc.contributor.author | Moosavi, S.H. | |
dc.contributor.author | Kroener, M. | |
dc.contributor.author | Woias, P. | |
dc.contributor.author | Lee, W. | |
dc.contributor.author | Fischer, S.F. | |
dc.date.accessioned | 2022-03-30T06:30:00Z | |
dc.date.available | 2022-03-30T06:30:00Z | |
dc.date.issued | 2021 | |
dc.description.abstract | We demonstrate the full thermoelectric and structural characterization of individual bismuth-based (Bi-based) core/shell nanowires. The influence of strain on the temperature dependence of the electrical conductivity, the absolute Seebeck coefficient and the thermal conductivity of bismuth/titanium dioxide (Bi/TiO2) nanowires with different diameters is investigated and compared to bismuth (Bi) and bismuth/tellurium (Bi/Te) nanowires and bismuth bulk. Scattering at surfaces, crystal defects and interfaces between the core and the shell reduces the electrical conductivity to less than 5% and the thermal conductivity to less than 25% to 50% of the bulk value at room temperature. On behalf of a compressive strain, Bi/TiO2 core/shell nanowires show a decreasing electrical conductivity with decreasing temperature opposed to that of Bi and Bi/Te nanowires. We find that the compressive strain induced by the TiO2 shell can lead to a band opening of bismuth increasing the absolute Seebeck coefficient by 10% to 30% compared to bulk at room temperature. In the semiconducting state, the activation energy is determined to |41.3 ± 0.2| meV. We show that if the strain exceeds the elastic limit the semimetallic state is recovered due to the lattice relaxation. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/8462 | |
dc.identifier.uri | https://doi.org/10.34657/7500 | |
dc.language.iso | eng | eng |
dc.publisher | Cambridge : Royal Society of Chemistry | eng |
dc.relation.doi | https://doi.org/10.1039/d0na00658k | |
dc.relation.essn | 2516-0230 | |
dc.rights.license | CC BY 3.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | eng |
dc.subject.other | Activation energy | eng |
dc.subject.other | Crystal defects | eng |
dc.subject.other | Electric conductivity of solids | eng |
dc.subject.other | Nanowires | eng |
dc.subject.other | Oxide minerals | eng |
dc.subject.other | Seebeck coefficient | eng |
dc.subject.other | Temperature distribution | eng |
dc.subject.other | Thermal conductivity | eng |
dc.subject.other | Titanium dioxide | eng |
dc.subject.other | Compressive strain | eng |
dc.subject.other | Core/shell nanowires | eng |
dc.subject.other | Elastic limit | eng |
dc.subject.other | Electrical conductivity | eng |
dc.subject.other | Lattice relaxation | eng |
dc.subject.other | Semiconductor transition | eng |
dc.subject.other | Structural characterization | eng |
dc.subject.other | Temperature dependence | eng |
dc.subject.other | Bismuth compounds | eng |
dc.title | Semimetal to semiconductor transition in Bi/TiO2 core/shell nanowires | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | FBH | eng |
wgl.subject | Chemie | eng |
wgl.type | Zeitschriftenartikel | eng |
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