Analysis of Mechanical Strain in AlGaN/GaN HFETs

dc.bibliographicCitation.articleNumber2200683
dc.bibliographicCitation.issue16
dc.bibliographicCitation.journalTitlePhysica status solidi : A, Applied researcheng
dc.bibliographicCitation.volume220
dc.contributor.authorYazdani, Hossein
dc.contributor.authorGraff, Andreas
dc.contributor.authorSimon-Najasek, Michél
dc.contributor.authorAltmann, Frank
dc.contributor.authorBrunner, Frank
dc.contributor.authorOstermay, Ina
dc.contributor.authorChevtchenko, Serguei
dc.contributor.authorWürfl, Joachim
dc.date.accessioned2023-06-02T15:03:42Z
dc.date.available2023-06-02T15:03:42Z
dc.date.issued2023
dc.description.abstractHerein, the influence of mechanical strain induced by passivation layers on the electrical performance of AlGaN/GaN heterostructure field-effect transistor is investigated. We studied the physical mechanism of a threshold voltage (Vth) shift for the monolithically fabricated on/off devices reported earlier by our group. For that, theoretical calculations, simulation-based analysis, and nano-beam electron diffraction (NBED) measurements based on STEM are used. Strain distribution in the gate vicinity of transistors is compared for a SiNx passivation layer with intrinsic stress from ≈0.5 to −1 GPa for normally on and normally off devices, respectively. The strain in epitaxial layers transferred by intrinsic stress of SiNx is quantitatively evaluated using NEBD method. Strain dissimilarity Δε = 0.23% is detected between normally on and normally off devices. Using this method, quantitative correlation between 1.13 V of Vth shift and microscopic strain difference in the epitaxial layers caused by 1.5 GPa intrinsic stress variation in passivation layer is provided. It is showed in this correlation that about half of the reported threshold voltage shift is induced by strain, i.e., by the piezoelectric effect. The rest of Vth shift is caused by the fabrication process. Therefore, various components/mechanisms contributing to the measured Vth shift are distinguished.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/12324
dc.identifier.urihttp://dx.doi.org/10.34657/11356
dc.language.isoeng
dc.publisherWeinheim : Wiley-VCH
dc.relation.doihttps://doi.org/10.1002/pssa.202200683
dc.relation.essn1862-6319
dc.relation.issn1862-6300
dc.rights.licenseCC BY-NC-ND 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0
dc.subject.ddc530
dc.subject.other2D electrons gas (2DEG)eng
dc.subject.otherGaN High-electron-mobility transistoreng
dc.subject.othernano-beam electron diffraction (NBED)eng
dc.subject.otherscanning transmission electron microscopy (STEM)eng
dc.subject.otherstrain engineeringeng
dc.titleAnalysis of Mechanical Strain in AlGaN/GaN HFETseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccess
wgl.contributorFBH
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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