High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness

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dc.bibliographicCitation.date2023
dc.bibliographicCitation.firstPage015506
dc.bibliographicCitation.issue1
dc.bibliographicCitation.volume98
dc.contributor.authorElattar, M.
dc.contributor.authorBrox, O.
dc.contributor.authorDella Casa, P.
dc.contributor.authorMogilatenko, A.
dc.contributor.authorMaaßdorf, A.
dc.contributor.authorMartin, D.
dc.contributor.authorWenzel, H.
dc.contributor.authorKnigge, A.
dc.contributor.authorWeyers, M.
dc.contributor.authorCrump, P.
dc.date.accessioned2023-02-10T07:33:38Z
dc.date.available2023-02-10T07:33:38Z
dc.date.issued2022
dc.description.abstractWe present high-power GaAs-based broad-area diode lasers with a novel variant of the enhanced self-aligned lateral structure ‘eSAS’, having a strongly reduced lasing threshold and improved peak conversion efficiency and beam quality in comparison to their standard gain-guided counterparts. To realize this new variant (eSAS-V2), a two-step epitaxial growth process involving in situ etching is used to integrate current-blocking layers, optimized for tunnel current suppression, within the p-Al0.8GaAs cladding layer of an extreme-triple-asymmetric epitaxial structure with a thin p-side waveguide. The blocking layers are thus in close proximity to the active zone, resulting in strong suppression of current spreading and lateral carrier accumulation. eSAS-V2 devices with 4 mm resonator length and varying stripe widths are characterized and compared to previous eSAS variant (eSAS-V1) as well as gain-guided reference devices, all having the same dimensions and epitaxial structure. Measurement results show that the new eSAS-V2 variant eliminates an estimated 89% of lateral current spreading, resulting in a strong threshold current reduction of 29% at 90 μm stripe width, while slope and series resistance are broadly unchanged. The novel eSAS-V2 devices also maintain high conversion efficiency up to high continuous-wave optical power, with an exemplary 90 μm device having 51.5% at 20 W. Near-field width is significantly narrowed in both eSAS variants, but eSAS-V2 exhibits a wider far-field angle, consistent with the presence of index guiding. Nonetheless, eSAS-V2 achieves higher beam quality and lateral brightness than gain-guided reference devices, but the index guiding in this realization prevents it from surpassing eSAS-V1. Overall, the different performance benefits of the eSAS approach are clearly demonstrated.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/11375
dc.identifier.urihttp://dx.doi.org/10.34657/10409
dc.language.isoeng
dc.publisherBristol : IoP Publ.
dc.relation.doihttps://doi.org/10.1088/1402-4896/aca637
dc.relation.essn1402-4896
dc.relation.ispartofseriesPhysica scripta : an international journal for experimental and theoretical physics 98 (2023), Nr. 1
dc.relation.issn0031-8949
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.subjectbroad-area diode lasereng
dc.subjectcurrent blockingeng
dc.subjectepitaxial regrowtheng
dc.subjecthigh powereng
dc.subjectin situ etchingeng
dc.subjectlateral current confinementeng
dc.subjectself-alignedeng
dc.subject.ddc530
dc.titleHigh-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightnesseng
dc.typearticle
dc.typeText
dcterms.bibliographicCitation.journalTitlePhysica scripta : an international journal for experimental and theoretical physics
local.doifilter.overrideja
tib.accessRightsopenAccess
wgl.contributorFBH
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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