High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness
dc.bibliographicCitation.date | 2023 | |
dc.bibliographicCitation.firstPage | 015506 | |
dc.bibliographicCitation.issue | 1 | |
dc.bibliographicCitation.volume | 98 | |
dc.contributor.author | Elattar, M. | |
dc.contributor.author | Brox, O. | |
dc.contributor.author | Della Casa, P. | |
dc.contributor.author | Mogilatenko, A. | |
dc.contributor.author | Maaßdorf, A. | |
dc.contributor.author | Martin, D. | |
dc.contributor.author | Wenzel, H. | |
dc.contributor.author | Knigge, A. | |
dc.contributor.author | Weyers, M. | |
dc.contributor.author | Crump, P. | |
dc.date.accessioned | 2023-02-10T07:33:38Z | |
dc.date.available | 2023-02-10T07:33:38Z | |
dc.date.issued | 2022 | |
dc.description.abstract | We present high-power GaAs-based broad-area diode lasers with a novel variant of the enhanced self-aligned lateral structure ‘eSAS’, having a strongly reduced lasing threshold and improved peak conversion efficiency and beam quality in comparison to their standard gain-guided counterparts. To realize this new variant (eSAS-V2), a two-step epitaxial growth process involving in situ etching is used to integrate current-blocking layers, optimized for tunnel current suppression, within the p-Al0.8GaAs cladding layer of an extreme-triple-asymmetric epitaxial structure with a thin p-side waveguide. The blocking layers are thus in close proximity to the active zone, resulting in strong suppression of current spreading and lateral carrier accumulation. eSAS-V2 devices with 4 mm resonator length and varying stripe widths are characterized and compared to previous eSAS variant (eSAS-V1) as well as gain-guided reference devices, all having the same dimensions and epitaxial structure. Measurement results show that the new eSAS-V2 variant eliminates an estimated 89% of lateral current spreading, resulting in a strong threshold current reduction of 29% at 90 μm stripe width, while slope and series resistance are broadly unchanged. The novel eSAS-V2 devices also maintain high conversion efficiency up to high continuous-wave optical power, with an exemplary 90 μm device having 51.5% at 20 W. Near-field width is significantly narrowed in both eSAS variants, but eSAS-V2 exhibits a wider far-field angle, consistent with the presence of index guiding. Nonetheless, eSAS-V2 achieves higher beam quality and lateral brightness than gain-guided reference devices, but the index guiding in this realization prevents it from surpassing eSAS-V1. Overall, the different performance benefits of the eSAS approach are clearly demonstrated. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/11375 | |
dc.identifier.uri | http://dx.doi.org/10.34657/10409 | |
dc.language.iso | eng | |
dc.publisher | Bristol : IoP Publ. | |
dc.relation.doi | https://doi.org/10.1088/1402-4896/aca637 | |
dc.relation.essn | 1402-4896 | |
dc.relation.ispartofseries | Physica scripta : an international journal for experimental and theoretical physics 98 (2023), Nr. 1 | |
dc.relation.issn | 0031-8949 | |
dc.rights.license | CC BY 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0 | |
dc.subject | broad-area diode laser | eng |
dc.subject | current blocking | eng |
dc.subject | epitaxial regrowth | eng |
dc.subject | high power | eng |
dc.subject | in situ etching | eng |
dc.subject | lateral current confinement | eng |
dc.subject | self-aligned | eng |
dc.subject.ddc | 530 | |
dc.title | High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness | eng |
dc.type | article | |
dc.type | Text | |
dcterms.bibliographicCitation.journalTitle | Physica scripta : an international journal for experimental and theoretical physics | |
local.doifilter.override | ja | |
tib.accessRights | openAccess | |
wgl.contributor | FBH | |
wgl.subject | Physik | ger |
wgl.type | Zeitschriftenartikel | ger |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- High-power_diode_lasers.pdf
- Size:
- 1.18 MB
- Format:
- Adobe Portable Document Format
- Description: