Self-heating effects in organic semiconductor devices enhanced by positive temperature feedback

dc.bibliographicCitation.seriesTitleWIAS Preprintseng
dc.bibliographicCitation.volume1693
dc.contributor.authorFischer, Axel
dc.contributor.authorPahner, Paul
dc.contributor.authorLüssem, Björn
dc.contributor.authorLeo, Karl
dc.contributor.authorScholz, Reinhard
dc.contributor.authorKoprucki, Thomas
dc.contributor.authorFuhrmann, Jürgen
dc.contributor.authorGärtner, Klaus
dc.contributor.authorGlitzky, Annegret
dc.date.accessioned2016-03-24T17:38:06Z
dc.date.available2019-06-28T08:02:15Z
dc.date.issued2012
dc.description.abstractWe studied the influence of heating effects in an organic device containing a layer sequence of n-doped / intrinsic / n-doped C60 between crossbar metal electrodes. A strong positive feedback between current and temperature occurs at high current densities beyond 100 A/cm2, as predicted by the extended Gaussian disorder model (EGDM) applicable to organic semiconductors. These devices give a perfect setting for studying the heat transport at high power densities because C60 can withstand temperatures above 200ʿ C. Infrared images of the device and detailed numerical simulations of the heat transport demonstrate that the electrical circuit produces a superposition of a homogeneous power dissipation in the active volume and strong heat sources localized at the contact edges ...
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.issn0946-8633
dc.identifier.urihttps://doi.org/10.34657/3154
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/1781
dc.language.isoengeng
dc.publisherBerlin : Weierstraß-Institut für Angewandte Analysis und Stochastik
dc.relation.issn0946-8633eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.subject.ddc510
dc.subject.otherHeat conductivityeng
dc.subject.otherorganic semiconductoreng
dc.subject.otherC60eng
dc.subject.othercrossbar electrodeseng
dc.subject.otherJoule heatingeng
dc.subject.otherdevice temperatureeng
dc.subject.otherthermal resistanceeng
dc.subject.otherbreak downeng
dc.subject.otheranalytical solutioneng
dc.subject.otherheat frow equationeng
dc.subject.other3D simulationeng
dc.subject.otherfinite volume methodeng
dc.titleSelf-heating effects in organic semiconductor devices enhanced by positive temperature feedback
dc.typeReporteng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorWIASeng
wgl.subjectMathematikeng
wgl.typeReport / Forschungsbericht / Arbeitspapiereng
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