Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

dc.bibliographicCitation.firstPage127154eng
dc.bibliographicCitation.issue12eng
dc.bibliographicCitation.journalTitleAIP Advanceseng
dc.bibliographicCitation.volume4eng
dc.contributor.authorBurghoorn, M.
dc.contributor.authorKniknie, B.
dc.contributor.authorvan Deelen, J.
dc.contributor.authorXu, M.
dc.contributor.authorVroon, Z.
dc.contributor.authorvan Ee, R.
dc.contributor.authorvan de Belt, R.
dc.contributor.authorBuskens, P.
dc.date.accessioned2022-01-25T11:24:33Z
dc.date.available2022-01-25T11:24:33Z
dc.date.issued2014
dc.description.abstractTextured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913-at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length. © 2014 Author(s).eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7922
dc.identifier.urihttps://doi.org/10.34657/6963
dc.language.isoengeng
dc.publisherNew York, NY : American Inst. of Physicseng
dc.relation.doihttps://doi.org/10.1063/1.4905456
dc.relation.essn2158-3226
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc530eng
dc.subject.otherCoppereng
dc.subject.otherEfficiencyeng
dc.subject.otherGalliumeng
dc.subject.otherIndiumeng
dc.subject.otherOptical filmseng
dc.subject.otherPhotonseng
dc.subject.otherRefractive indexeng
dc.subject.otherSilicon solar cellseng
dc.subject.otherSolar absorberseng
dc.subject.otherThin film solar cellseng
dc.subject.otherAbsorbed photonseng
dc.subject.otherAluminum-doped zinc oxideeng
dc.subject.otherCIGS solar cellseng
dc.subject.otherDifferent layerseng
dc.subject.otherOptical simulationeng
dc.subject.otherPhoton path lengtheng
dc.subject.otherThin-film silicon solar cellseng
dc.subject.otherTransparent conductorseng
dc.subject.otherSolar cellseng
dc.titleImproving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxideeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorDWIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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