Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors
dc.bibliographicCitation.firstPage | 163504 | |
dc.bibliographicCitation.issue | 16 | |
dc.bibliographicCitation.journalTitle | Applied physics letters | eng |
dc.bibliographicCitation.volume | 121 | |
dc.contributor.author | Yang, Jun | |
dc.contributor.author | Bahrami, Amin | |
dc.contributor.author | Ding, Xingwei | |
dc.contributor.author | Lehmann, Sebastian | |
dc.contributor.author | Nielsch, Kornelius | |
dc.date.accessioned | 2023-01-31T08:27:32Z | |
dc.date.available | 2023-01-31T08:27:32Z | |
dc.date.issued | 2022 | |
dc.description.abstract | Transparent conductive electrodes are essential in the application of flexible electronics. In this work, we successfully demonstrated a novel strategy for improving mechanical/electrical properties of indium tin oxide (ITO)-free flexible silver nanowire (Ag NW) thin films. To reduce the contact resistance of Ag NWs, an ethanol-mist was used to weld the cross junction of wires at room temperature. The nano-welded Ag NWs (W-Ag NWs) were then coated with an aluminum-doped ZnO (AZO) solution, which significantly reduce the roughness of the Ag NW thin film. Finally, an ultrathin SbOx thin film of 2 nm was deposited on the film surface using a water-free low-temperature atomic layer deposition technique to protect the W-Ag NW/AZO layer from water or oxygen degradation. The treated Ag NWs have a high transmittance of 87% and a low sheet resistance of about 15 ω/sq, which is comparable with the ITO electrode's property. After 1000 cycles of bending testing, the W-Ag NW/AZO/SbOx film practically retains its initial conductivity. Furthermore, the samples were immersed in a solution with pH values ranging from 3 to 13 for 5 min. When compared to untreated Ag NWs or those coated with AlOx thin films, W-Ag NW/AZO/SbOx had superior electrical stability. The W-Ag NW/AZO/SbOxlayer was integrated as a gate electrode on low-power operating flexible Ti-ZnO thin film transistors (TFTs). The 5% Ti-ZnO TFT has a field-effect mobility of 19.7 cm2 V s-1, an Ion/Ioff ratio of 107, and a subthreshold swing of 147 mV decade-1. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/11173 | |
dc.identifier.uri | http://dx.doi.org/10.34657/10199 | |
dc.language.iso | eng | |
dc.publisher | Melville, NY : American Inst. of Physics | |
dc.relation.doi | https://doi.org/10.1063/5.0118500 | |
dc.relation.essn | 1077-3118 | |
dc.relation.issn | 0003-6951 | |
dc.rights.license | CC BY 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0 | |
dc.subject.ddc | 530 | |
dc.subject.other | Aluminum-doped ZnO | eng |
dc.subject.other | C. thin film transistor (TFT) | eng |
dc.subject.other | Flexible thin-films | eng |
dc.subject.other | Indium tin oxide free | eng |
dc.subject.other | Mechanical | eng |
dc.subject.other | Novel strategies | eng |
dc.subject.other | Silver nanowires | eng |
dc.subject.other | Thin-films | eng |
dc.subject.other | Transparent conductive electrodes | eng |
dc.subject.other | ZnO thin film | eng |
dc.title | Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | |
wgl.contributor | IFWD | |
wgl.subject | Physik | ger |
wgl.type | Zeitschriftenartikel | ger |
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