Simulating the electronic properties of semiconductor nanostructures using multiband $kcdot p$ models

dc.bibliographicCitation.volume2773
dc.contributor.authorMarquardt, Oliver
dc.date.accessioned2022-06-30T13:24:02Z
dc.date.available2022-06-30T13:24:02Z
dc.date.issued2020
dc.description.abstractThe eight-band $kcdot p$ formalism been successfully applied to compute the electronic properties of a wide range of semiconductor nanostructures in the past and can be considered the backbone of modern semiconductor heterostructure modelling. However, emerging novel material systems and heterostructure fabrication techniques raise questions that cannot be answered using this well-established formalism, due to its intrinsic limitations. The present article reviews recent studies on the calculation of electronic properties of semiconductor nanostructures using a generalized multiband $kcdot p$ approach that allows both the application of the eight-band model as well as more sophisticated approaches for novel material systems and heterostructures.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/9423
dc.identifier.urihttps://doi.org/10.34657/8461
dc.language.isoeng
dc.publisherBerlin : Weierstraß-Institut für Angewandte Analysis und Stochastik
dc.relation.doihttps://doi.org/10.20347/WIAS.PREPRINT.2773
dc.relation.hasversionhttps://doi.org/ 10.1016/j.commatsci.2021.110318
dc.relation.issn2198-5855
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subjectNanowireseng
dc.subjectquantum dotseng
dc.subjectelectronic propertieseng
dc.subject$kcdot p$ modelseng
dc.subject.ddc510
dc.titleSimulating the electronic properties of semiconductor nanostructures using multiband $kcdot p$ modelseng
dc.typereporteng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitlePreprint / Weierstraß-Institut für Angewandte Analysis und Stochastik
dcterms.extent19 S.
tib.accessRightsopenAccess
wgl.contributorWIAS
wgl.subjectMathematik
wgl.typeReport / Forschungsbericht / Arbeitspapier
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