In-plane optical anisotropy due to conduction band electron wavefunctions

Thumbnail Image

Date

2007

Authors

Editor

Advisor

Volume

Issue

Journal

Series Titel

Book Title

Publisher

Cambridge : arXiv

Supplementary Material

Other Versions

Link to publishers' Version

http://arxiv.org/abs/cond-mat/0703088

Abstract

Photoluminescence measurements were carried out on Be δ-doped GaAs/Al0.33Ga0.67As heterostructure at 1.6 K in magnetic fields (B) up to 5 T. Luminescence originating from recombination of a two-dimensional electron gas (2DEG) and photo excited holes localized on Be acceptors was analyzed. The degree of circular polarization (γC) of the luminescence from fully occupied Landau levels was determined as a function of B and the 2DEG concentration, ns. At B constant, γC decreased with the increase of ns. Two mechanisms of the γC(ns) dependence are discussed: a) the Stark effect on a photo excited hole bound to Be acceptor and b) the in-plane anisotropy of the intensity of optical transitions. A quantitative analysis shows that the influence of the Stark effect on γC is negligible in the present experiment. We propose that the γC(ns) dependence results from the C2v symmetry of conduction band electron wavefunctions and we give qualitative arguments supporting this interpretation.

Description

Keywords

Keywords GND

Conference

Publication Type

Other

Version

publishedVersion

URI

https://oa.tib.eu/renate/handle/123456789/3937

Collections

Physik

License

This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.
Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.