Bulk single crystals and physical properties of β-(AlxGa1-x)2O3(x = 0-0.35) grown by the Czochralski method
dc.bibliographicCitation.firstPage | 035702 | |
dc.bibliographicCitation.issue | 3 | |
dc.bibliographicCitation.journalTitle | Journal of applied physics : AIP's archival journal for significant new results in applied physics | eng |
dc.bibliographicCitation.volume | 133 | |
dc.contributor.author | Galazka, Zbigniew | |
dc.contributor.author | Fiedler, Andreas | |
dc.contributor.author | Popp, Andreas | |
dc.contributor.author | Ganschow, Steffen | |
dc.contributor.author | Kwasniewski, Albert | |
dc.contributor.author | Seyidov, Palvan | |
dc.contributor.author | Pietsch, Mike | |
dc.contributor.author | Dittmar, Andrea | |
dc.contributor.author | Anooz, Saud Bin | |
dc.contributor.author | Irmscher, Klaus | |
dc.contributor.author | Suendermann, Manuela | |
dc.contributor.author | Klimm, Detlef | |
dc.contributor.author | Chou, Ta-Shun | |
dc.contributor.author | Rehm, Jana | |
dc.contributor.author | Schroeder, Thomas | |
dc.contributor.author | Bickermann, Matthias | |
dc.date.accessioned | 2023-06-02T15:03:42Z | |
dc.date.available | 2023-06-02T15:03:42Z | |
dc.date.issued | 2023 | |
dc.description.abstract | We have systematically studied the growth, by the Czochralski method, and basic physical properties of a 2 cm and 2 in. diameter bulk β-(AlxGa1-x)2O3 single crystal with [Al] = 0-35 mol. % in the melt in 5 mol. % steps. The segregation coefficient of Al in the Ga2O3 melt of 1.1-1.2 results in a higher Al content in the crystals than in the melt. The crystals were also co-doped with Si or Mg. [Al] = 30 mol. % in the melt (33-36 mol. % in the crystals) seems to be a limit for obtaining bulk single crystals of high structural quality suitable for homoepitaxy. The crystals were either semiconducting (no intentional co-dopants with [Al] = 0-30 mol. % and Si-doped with [Al] = 15-20 mol. %), degenerately semiconducting (Si-doped with [Al] ≤ 15 mol. %), or semi-insulating ([Al] ≥ 25 mol. % and/or Mg-doped). The full width at half maximum of the rocking curve was 30-50 arcsec. The crystals showed a linear but anisotropic decrease in all lattice constants and a linear increase in the optical bandgap (5.6 eV for [Al] = 30 mol. %). The room temperature electron mobility at similar free electron concentrations gradually decreases with [Al], presumably due to enhanced scattering at phonons as the result of a larger lattice distortion. In Si co-doped crystals, the scattering is enhanced by ionized impurities. Measured electron mobilities and bandgaps enabled to estimate the Baliga figure of merit for electronic devices. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/12327 | |
dc.identifier.uri | http://dx.doi.org/10.34657/11359 | |
dc.language.iso | eng | |
dc.publisher | Melville, NY : American Inst. of Physics | |
dc.relation.doi | https://doi.org/10.1063/5.0131285 | |
dc.relation.essn | 1089-7550 | |
dc.relation.issn | 0021-8979 | |
dc.rights.license | CC BY 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.subject.ddc | 530 | |
dc.subject.other | Aluminum | eng |
dc.subject.other | Crystal impurities | eng |
dc.subject.other | Electron mobility | eng |
dc.subject.other | Electrons | eng |
dc.subject.other | Energy gap | eng |
dc.title | Bulk single crystals and physical properties of β-(AlxGa1-x)2O3(x = 0-0.35) grown by the Czochralski method | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | |
wgl.contributor | IKZ | |
wgl.subject | Physik | ger |
wgl.type | Zeitschriftenartikel | ger |
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