Spectral linewidth vs. Front facet reflectivity of 780 nm DFB diode lasers at high optical output power

Abstract

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.

Description
Keywords
Front facet reflectivity, High power diode laser, Narrow linewidth, Semiconductor laser
Citation
Nguyen, T.-P., Wenzel, H., Brox, O., Bugge, F., Ressel, P., Schiemangk, M., et al. (2018). Spectral linewidth vs. Front facet reflectivity of 780 nm DFB diode lasers at high optical output power. 8(7). https://doi.org//10.3390/app8071104
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License
CC BY 4.0 Unported