Iron-assisted ion beam patterning of Si(001) in the crystalline regime

We present ion beam erosion experiments on Si(001) with simultaneous sputter co-deposition of steel at 660 K. At this temperature, the sample remains within the crystalline regime during ion exposure and pattern formation takes place by phase separation of Si and iron-silicide. After an ion fluence of F ≈ 5.9×10 21 ions m -2, investigations by atomic force microscopy and scanning electron microscopy identify sponge, segmented wall and pillar patterns with high aspect ratios and heights of up to 200 nm. Grazing incidence x-ray diffraction and transmission electron microscopy reveal the structures to be composed of polycrystalline iron-silicide. The observed pattern formation is compared to that in the range of 140-440K under otherwise identical conditions, where a thin amorphous layer forms due to ion bombardment.

Keywords

Amorphous layer, Codeposition, Grazing incidence X-ray diffraction, High aspect ratio, Identical conditions, Ion beam erosion, Ion beam patterning, Ion fluences, Iron silicides, Pattern formation, Polycrystalline, Si(0 0 1), Amorphous materials, Aspect ratio, Atomic force microscopy, Crystalline materials, Ion bombardment, Iron, Phase separation, Scanning electron microscopy, Silicides, Transmission electron microscopy, X ray diffraction, Silicon

URI

https://doi.org/10.34657/4418
https://oa.tib.eu/renate/handle/123456789/5789

Citation

Macko, S., Grenzer, J., Frost, F., Engler, M., Hirsch, D., Fritzsche, M., et al. (2012). Iron-assisted ion beam patterning of Si(001) in the crystalline regime. 14. https://doi.org//10.1088/1367-2630/14/7/073003

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Physik

License

CC BY-NC-SA 3.0 Unported

https://creativecommons.org/licenses/by-nc-sa/3.0/

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