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Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction
| dc.bibliographicCitation.journalTitle | Journal of Applied Physics | eng |
| dc.contributor.author | Kaganer, Vladimir | |
| dc.contributor.author | Ulyanenkova, Tatjana | |
| dc.contributor.author | Benediktovitch, Andrei | |
| dc.contributor.author | Myronov, Maksym | |
| dc.contributor.author | Ulyanenkov, Alex | |
| dc.date.accessioned | 2018-01-23T03:02:27Z | |
| dc.date.available | 2019-06-28T12:39:03Z | |
| dc.date.issued | 2017 | |
| dc.description.abstract | The experimental x-ray diffraction patterns of a Si0.4Ge0.6/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an inhomogeneous distribution of 60° dislocations with dislocations arranged in bunches is needed to explain the experiment correctly. As a result of the dislocation bunching, the positions of the x-ray diffraction peaks do not correspond to the average dislocation density but reveal less than a half of the actual relaxation. | eng |
| dc.description.version | publishedVersion | eng |
| dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/4171 | |
| dc.language.iso | eng | eng |
| dc.publisher | Cambridge : arXiv | eng |
| dc.relation.uri | https://arxiv.org/abs/1706.02954 | |
| dc.rights.license | This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties. | eng |
| dc.rights.license | Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. | ger |
| dc.subject.ddc | 530 | eng |
| dc.subject.other | X-ray diffraction | eng |
| dc.subject.other | Epitaxy | eng |
| dc.subject.other | Monte Carlo methods | eng |
| dc.subject.other | Semiconductors | eng |
| dc.subject.other | Microscopy | eng |
| dc.title | Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction | eng |
| dc.type | Article | eng |
| dc.type | Text | eng |
| tib.accessRights | openAccess | eng |
| wgl.contributor | PDI | eng |
| wgl.subject | Physik | eng |
| wgl.type | Zeitschriftenartikel | eng |