Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
dc.bibliographicCitation.firstPage | 117 | eng |
dc.bibliographicCitation.issue | 3 | eng |
dc.bibliographicCitation.journalTitle | Materials Research Letters | eng |
dc.bibliographicCitation.lastPage | 123 | eng |
dc.bibliographicCitation.volume | 7 | eng |
dc.contributor.author | Niu, Gang | |
dc.contributor.author | Calka, Pauline | |
dc.contributor.author | Huang, Peng | |
dc.contributor.author | Sharath, Sankaramangalam Ulhas | |
dc.contributor.author | Petzold, Stefan | |
dc.contributor.author | Gloskovskii, Andrei | |
dc.contributor.author | Fröhlich, Karol | |
dc.contributor.author | Zhao, Yudi | |
dc.contributor.author | Kan, Jinfeng | |
dc.contributor.author | Schubert, Markus Andreas | |
dc.contributor.author | Bärwolf, Florian | |
dc.contributor.author | Ren, Wei | |
dc.contributor.author | Ye, Zuo-Guang | |
dc.contributor.author | Perez, Eduardo | |
dc.contributor.author | Wenger, Christian | |
dc.contributor.author | Alff, Lambert | |
dc.contributor.author | Schroeder, Thomas | |
dc.date.accessioned | 2021-11-24T05:38:09Z | |
dc.date.available | 2021-11-24T05:38:09Z | |
dc.date.issued | 2019 | |
dc.description.abstract | The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices. IMPACT STATEMENT: The oxygen ‘breathing’ behavior at the oxide/metal interface of filament-type resistive random access memory devices is operandoly detected using hard X-ray photoelectron spectroscopy as a diagnostic tool. © 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/7411 | |
dc.identifier.uri | https://doi.org/10.34657/6458 | |
dc.language.iso | eng | eng |
dc.publisher | London [u.a.] : Taylor & Francis | eng |
dc.relation.doi | https://doi.org/10.1080/21663831.2018.1561535 | |
dc.relation.essn | 2166-3831 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.ddc | 600 | eng |
dc.subject.ddc | 670 | eng |
dc.subject.other | HAXPES | eng |
dc.subject.other | HfO2 | eng |
dc.subject.other | interface | eng |
dc.subject.other | resistive switching | eng |
dc.subject.other | RRAM | eng |
dc.title | Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IHP | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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